TY - JOUR
T1 - Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction
AU - Sahli, Florent
AU - Kamino, Brett A.
AU - Werner, Jérémie
AU - Bräuninger, Matthias
AU - Paviet-Salomon, Bertrand
AU - Barraud, Loris
AU - Monnard, Raphaël
AU - Seif, Johannes Peter
AU - Tomasi, Andrea
AU - Jeangros, Quentin
AU - Hessler-Wyser, Aïcha
AU - De Wolf, Stefaan
AU - Despeisse, Matthieu
AU - Nicolay, Sylvain
AU - Niesen, Bjoern
AU - Ballif, Christophe
N1 - Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/2/26
Y1 - 2018/2/26
N2 - Perovskite/silicon tandem solar cells are increasingly recognized as promising candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.
AB - Perovskite/silicon tandem solar cells are increasingly recognized as promising candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.
KW - microcrystalline
KW - multijunction
KW - organic–inorganic perovskite
KW - silicon heterojunction
KW - tunnel junction
UR - http://www.scopus.com/inward/record.url?scp=85030636747&partnerID=8YFLogxK
U2 - 10.1002/aenm.201701609
DO - 10.1002/aenm.201701609
M3 - Article
AN - SCOPUS:85030636747
SN - 1614-6832
VL - 8
JO - Advanced Energy Materials
JF - Advanced Energy Materials
IS - 6
M1 - 1701609
ER -