Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays

Zhe Zhuang; Daisuke Iida; Pavel Kirilenko; Kazuhiro Ohkawa

doi:10.1364/oe.435556

Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays

Zhe Zhuang, Daisuke Iida, Pavel Kirilenko, Kazuhiro Ohkawa

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

This study demonstrates the performance improvements of InGaN-based red lightemitting diodes (LEDs) by fabricating micro-holes in the planar mesa. The peak wavelengths of the micro-hole LEDs (MHLEDs) exhibited a blue-shift of around 3 nm compared to the planar LEDs (PLEDs) at the same current density. The lowest full width at half maximum of MHLEDs was 59 nm, which is slightly less than that of the PLEDs. The light output power and external quantum efficiency of the MHLED with a wavelength of 634 nm at 20 mA were 0.6 mW and 1.5%, which are 8.5% higher than those of the PLED.

Original language	English (US)
Journal	Optics Express
DOIs	https://doi.org/10.1364/oe.435556
State	Published - Aug 24 2021

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/oe.435556

https://repository.kaust.edu.sa/bitstream/10754/670866/1/InGaN%20microhole-OE-Final.pdf

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title = "Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays",

abstract = "This study demonstrates the performance improvements of InGaN-based red lightemitting diodes (LEDs) by fabricating micro-holes in the planar mesa. The peak wavelengths of the micro-hole LEDs (MHLEDs) exhibited a blue-shift of around 3 nm compared to the planar LEDs (PLEDs) at the same current density. The lowest full width at half maximum of MHLEDs was 59 nm, which is slightly less than that of the PLEDs. The light output power and external quantum efficiency of the MHLED with a wavelength of 634 nm at 20 mA were 0.6 mW and 1.5%, which are 8.5% higher than those of the PLED.",

author = "Zhe Zhuang and Daisuke Iida and Pavel Kirilenko and Kazuhiro Ohkawa",

note = "KAUST Repository Item: Exported on 2021-09-01 Acknowledgements: King Abdullah University of Science and Technology (BAS/1/1676-01-01).",

year = "2021",

month = aug,

day = "24",

doi = "10.1364/oe.435556",

language = "English (US)",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optical Society of America",

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TY - JOUR

T1 - Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays

AU - Zhuang, Zhe

AU - Iida, Daisuke

AU - Kirilenko, Pavel

AU - Ohkawa, Kazuhiro

N1 - KAUST Repository Item: Exported on 2021-09-01 Acknowledgements: King Abdullah University of Science and Technology (BAS/1/1676-01-01).

PY - 2021/8/24

Y1 - 2021/8/24

N2 - This study demonstrates the performance improvements of InGaN-based red lightemitting diodes (LEDs) by fabricating micro-holes in the planar mesa. The peak wavelengths of the micro-hole LEDs (MHLEDs) exhibited a blue-shift of around 3 nm compared to the planar LEDs (PLEDs) at the same current density. The lowest full width at half maximum of MHLEDs was 59 nm, which is slightly less than that of the PLEDs. The light output power and external quantum efficiency of the MHLED with a wavelength of 634 nm at 20 mA were 0.6 mW and 1.5%, which are 8.5% higher than those of the PLED.

AB - This study demonstrates the performance improvements of InGaN-based red lightemitting diodes (LEDs) by fabricating micro-holes in the planar mesa. The peak wavelengths of the micro-hole LEDs (MHLEDs) exhibited a blue-shift of around 3 nm compared to the planar LEDs (PLEDs) at the same current density. The lowest full width at half maximum of MHLEDs was 59 nm, which is slightly less than that of the PLEDs. The light output power and external quantum efficiency of the MHLED with a wavelength of 634 nm at 20 mA were 0.6 mW and 1.5%, which are 8.5% higher than those of the PLED.

UR - http://hdl.handle.net/10754/670866

UR - https://www.osapublishing.org/abstract.cfm?URI=oe-29-19-29780

U2 - 10.1364/oe.435556

DO - 10.1364/oe.435556

M3 - Article

SN - 1094-4087

JO - Optics Express

JF - Optics Express

ER -

Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays

Abstract

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