Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out-diffusion from Zn doped GaAs substrate

Feng Zhao; In W. Choi; Peter Hing; Shu Yuan; Teik K. Ong; Boon S. Ooi; Jian Jiang; Michael C.Y. Chan; Charles Surya; E. H. Li

Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out-diffusion from Zn doped GaAs substrate

Feng Zhao, In W. Choi, Peter Hing, Shu Yuan, Teik K. Ong, Boon S. Ooi, Jian Jiang, Michael C.Y. Chan, Charles Surya, E. H. Li

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of n-type doping by Si and p-type doping by Zn in the GaAs substrate on the thermal intermixing of undoped GaAs/Al_0.24Ga_0.76As single quantum well (QW) structures were examined. For comparison, semi-insulating GaAs substrate was also used. Samples with Si-doped GaAs substrate and semi-insulating GaAs substrate show blue shifts that are in agreement with thermal stability studies by other workers. The sample with Zn-doped GaAs substrate however, showed clear evidence of suppressed intermixing by Zn diffusion from the substrate into the QW structure.

Original language	English (US)
Pages (from-to)	710-711
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
State	Published - 2000
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out-diffusion from Zn doped GaAs substrate",

abstract = "The effects of n-type doping by Si and p-type doping by Zn in the GaAs substrate on the thermal intermixing of undoped GaAs/Al0.24Ga0.76As single quantum well (QW) structures were examined. For comparison, semi-insulating GaAs substrate was also used. Samples with Si-doped GaAs substrate and semi-insulating GaAs substrate show blue shifts that are in agreement with thermal stability studies by other workers. The sample with Zn-doped GaAs substrate however, showed clear evidence of suppressed intermixing by Zn diffusion from the substrate into the QW structure.",

author = "Feng Zhao and Choi, {In W.} and Peter Hing and Shu Yuan and Ong, {Teik K.} and Ooi, {Boon S.} and Jian Jiang and Chan, {Michael C.Y.} and Charles Surya and Li, {E. H.}",

year = "2000",

language = "English (US)",

volume = "2",

pages = "710--711",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out-diffusion from Zn doped GaAs substrate

AU - Zhao, Feng

AU - Choi, In W.

AU - Hing, Peter

AU - Yuan, Shu

AU - Ong, Teik K.

AU - Ooi, Boon S.

AU - Jiang, Jian

AU - Chan, Michael C.Y.

AU - Surya, Charles

AU - Li, E. H.

PY - 2000

Y1 - 2000

N2 - The effects of n-type doping by Si and p-type doping by Zn in the GaAs substrate on the thermal intermixing of undoped GaAs/Al0.24Ga0.76As single quantum well (QW) structures were examined. For comparison, semi-insulating GaAs substrate was also used. Samples with Si-doped GaAs substrate and semi-insulating GaAs substrate show blue shifts that are in agreement with thermal stability studies by other workers. The sample with Zn-doped GaAs substrate however, showed clear evidence of suppressed intermixing by Zn diffusion from the substrate into the QW structure.

AB - The effects of n-type doping by Si and p-type doping by Zn in the GaAs substrate on the thermal intermixing of undoped GaAs/Al0.24Ga0.76As single quantum well (QW) structures were examined. For comparison, semi-insulating GaAs substrate was also used. Samples with Si-doped GaAs substrate and semi-insulating GaAs substrate show blue shifts that are in agreement with thermal stability studies by other workers. The sample with Zn-doped GaAs substrate however, showed clear evidence of suppressed intermixing by Zn diffusion from the substrate into the QW structure.

UR - http://www.scopus.com/inward/record.url?scp=0034478265&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0034478265

SN - 1092-8081

VL - 2

SP - 710

EP - 711

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -

Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out-diffusion from Zn doped GaAs substrate

Abstract

ASJC Scopus subject areas

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