We report the fabrication of an epitaxial lateral overgrown (ELO) GaInN layer on a high crystalline-quality-grooved GaN template, which is improved by a sidewall ELO (SELO) technology. The photoluminescence peak intensity of ELO-grown GaInN layer on the SELO GaN underlying layer is twice as high as that of ELO-grown GaInN layer on the m-plane GaN template. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
|Original language||English (US)|
|Title of host publication||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Number of pages||3|
|State||Published - Dec 1 2008|
ASJC Scopus subject areas
- Condensed Matter Physics