Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth

Ryota Senda, Aya Miura, Takeshi Kawashima, Daisuke Iida, Tetsuya Nagai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

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Engineering