Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

K. Kusakabe; T. Furuzuki; K. Ohkawa

doi:10.1016/j.physb.2005.12.132

Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

K. Kusakabe^*, T. Furuzuki, K. Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer thickness. The highest room-temperature mobility of 220 cm²/V s was recorded at the carrier density of 1.1×1018cm-3. Temperature dependence of electrical property revealed that the peak mobility of 234 cm²/V s was obtained at 249 K. From the slope of carrier density as a function of inverse temperature, the activation energy of Si-donors was evaluated to be 11 meV.

Original language	English (US)
Pages (from-to)	520-522
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.132
State	Published - Apr 1 2006
Externally published	Yes
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005

Keywords

Electrical property
GaN
MOVPE

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2005.12.132

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title = "Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy",

abstract = "Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer thickness. The highest room-temperature mobility of 220 cm2/V s was recorded at the carrier density of 1.1×1018cm-3. Temperature dependence of electrical property revealed that the peak mobility of 234 cm2/V s was obtained at 249 K. From the slope of carrier density as a function of inverse temperature, the activation energy of Si-donors was evaluated to be 11 meV.",

keywords = "Electrical property, GaN, MOVPE",

author = "K. Kusakabe and T. Furuzuki and K. Ohkawa",

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doi = "10.1016/j.physb.2005.12.132",

language = "English (US)",

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T1 - Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

AU - Kusakabe, K.

AU - Furuzuki, T.

AU - Ohkawa, K.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer thickness. The highest room-temperature mobility of 220 cm2/V s was recorded at the carrier density of 1.1×1018cm-3. Temperature dependence of electrical property revealed that the peak mobility of 234 cm2/V s was obtained at 249 K. From the slope of carrier density as a function of inverse temperature, the activation energy of Si-donors was evaluated to be 11 meV.

AB - Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer thickness. The highest room-temperature mobility of 220 cm2/V s was recorded at the carrier density of 1.1×1018cm-3. Temperature dependence of electrical property revealed that the peak mobility of 234 cm2/V s was obtained at 249 K. From the slope of carrier density as a function of inverse temperature, the activation energy of Si-donors was evaluated to be 11 meV.

KW - Electrical property

KW - GaN

KW - MOVPE

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DO - 10.1016/j.physb.2005.12.132

M3 - Conference article

AN - SCOPUS:33645222778

SN - 0921-4526

VL - 376-377

SP - 520

EP - 522

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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