Improvement of optical properties of InGaN-based red multiple quantum wells

Xin Hou, Tao Yang, Shao-Sheng Fan, Huan Xu, Daisuke Iida, Yue-Jun Liu, Yang Mei, Guo-En Weng, Shao-Qiang Chen, Bao-Ping Zhang, Kazuhiro Ohkawa

Research output: Contribution to journalArticlepeer-review


The realization of red-emitting InGaN quantum well (QW) is a hot issue in current nitride semiconductor research. It has been shown that using a low-Indium (In)-content pre-well layer is an effective method to improve the crystal quality of red QWs. On the other hand, keeping uniform composition distribution at higher In content in red QWs is an urgent problem to be solved. In this work, the optical properties of blue pre-QW and red QWs with different well width and growth conditions are investigated by photoluminescence (PL). The results prove that the higher-In-content blue pre-QW is beneficial to effectively relieve the residual stress. Meanwhile, higher growth temperature and growth rate can improve the uniformity of In content and the crystal quality of red QWs, enhancing the PL emission intensity. Possible physical process of stress evolution and the model of In fluctuation in the subsequent red QW are discussed. This study provides a useful reference for the development of InGaN-based red emission materials and devices.
Original languageEnglish (US)
Pages (from-to)18567
JournalOptics Express
Issue number11
StatePublished - May 18 2023

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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