Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma

D. Nie; T. Mei; H. S. Djie; B. S. Ooi; X. H. Zhang

doi:10.1063/1.2215602

Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma

D. Nie^*, T. Mei, H. S. Djie, B. S. Ooi, X. H. Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The crystal quality of InGaAs/GaAs quantum, dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability, The Lime-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1.140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions.

Original language	English (US)
Article number	251102
Journal	Applied Physics Letters
Volume	88
Issue number	25
DOIs	https://doi.org/10.1063/1.2215602
State	Published - Jun 19 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2215602

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title = "Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma",

abstract = "The crystal quality of InGaAs/GaAs quantum, dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability, The Lime-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1.140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions.",

author = "D. Nie and T. Mei and Djie, {H. S.} and Ooi, {B. S.} and Zhang, {X. H.}",

year = "2006",

month = jun,

day = "19",

doi = "10.1063/1.2215602",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

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T1 - Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma

AU - Nie, D.

AU - Mei, T.

AU - Djie, H. S.

AU - Ooi, B. S.

AU - Zhang, X. H.

PY - 2006/6/19

Y1 - 2006/6/19

N2 - The crystal quality of InGaAs/GaAs quantum, dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability, The Lime-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1.140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions.

AB - The crystal quality of InGaAs/GaAs quantum, dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability, The Lime-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1.140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions.

UR - http://www.scopus.com/inward/record.url?scp=33745450411&partnerID=8YFLogxK

U2 - 10.1063/1.2215602

DO - 10.1063/1.2215602

M3 - Article

AN - SCOPUS:33745450411

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 251102

ER -

Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma

Abstract

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