TY - JOUR
T1 - Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition
AU - Yonkee, Benjanim
AU - Keller, Stacia
N1 - KAUST Repository Item: Exported on 2021-07-16
Acknowledgements: This work was supported by the King Abduallah Center for Science and Technology-King Abdullah University of Science and Technology-University of California, Santa Barbara Solid State Lighting Program (KACST-KAUST-UCSB SSLP). The authors would like to the Materials Research Laboratory (MRL), California Nanosystems Institute (CNSI), and the Nanofabrication facility at UC Santa Barbara for providing access and training to their laboratories.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2016/6/30
Y1 - 2016/6/30
N2 - Parasitic pre-reactions are known to play a role in the growth of aluminum nitride (AlN) via metal organic chemical vapor deposition, where they can deplete precursor molecules before reaching the substrate, leading to poor growth efficiency. Studies have shown that reducing the growth pressure and growth temperature results in improved growth efficiency of AlN; however, superior crystal quality and reduced impurity incorporation are generally best obtained when growing at high temperatures. This study shows that, with proper alkyl source dilution, parasitic pre-reactions can be suppressed while maintaining high growth temperatures. The results show an 18increase in growth rate and efficiency of AlN films: from 0.04 μm h-1 to 0.73 μm h-1, and 26 μm mol-1 to 502 μm mol-1, respectively; under constant TMAl flow and a small change in total gas flow. This results in 6.8% of Al atoms from the injected TMAl being utilized for AlN layer growth for this reactor configuration. This is better than the standard GaN growth, where 6.0% of the Ga atoms injected from TMGa are utilized for GaN growth.
AB - Parasitic pre-reactions are known to play a role in the growth of aluminum nitride (AlN) via metal organic chemical vapor deposition, where they can deplete precursor molecules before reaching the substrate, leading to poor growth efficiency. Studies have shown that reducing the growth pressure and growth temperature results in improved growth efficiency of AlN; however, superior crystal quality and reduced impurity incorporation are generally best obtained when growing at high temperatures. This study shows that, with proper alkyl source dilution, parasitic pre-reactions can be suppressed while maintaining high growth temperatures. The results show an 18increase in growth rate and efficiency of AlN films: from 0.04 μm h-1 to 0.73 μm h-1, and 26 μm mol-1 to 502 μm mol-1, respectively; under constant TMAl flow and a small change in total gas flow. This results in 6.8% of Al atoms from the injected TMAl being utilized for AlN layer growth for this reactor configuration. This is better than the standard GaN growth, where 6.0% of the Ga atoms injected from TMGa are utilized for GaN growth.
UR - http://hdl.handle.net/10754/670249
UR - https://iopscience.iop.org/article/10.1088/0268-1242/31/8/085003
UR - http://www.scopus.com/inward/record.url?scp=84979527767&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/31/8/085003
DO - 10.1088/0268-1242/31/8/085003
M3 - Article
SN - 0268-1242
VL - 31
SP - 085003
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 8
ER -