Impurity free vacancy disordering using phosphorus doped SiO2 and pure SiO2 caps

P. Cusumano; A. Saher Helmy; B. S. Ooi; R. M. De La Rue; A. C. Bryce; J. H. Marsh

Impurity free vacancy disordering using phosphorus doped SiO₂ and pure SiO₂ caps

P. Cusumano^*, A. Saher Helmy, B. S. Ooi, R. M. De La Rue, A. C. Bryce, J. H. Marsh

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

A spatially selective quantum well intermixing process, using phosphorus-doped silica (SiO₂:P) containing 5 wt% P to inhibit intermixing and pure SiO₂ to enhance intermixing, is presented. The SiO₂:P cap has been found to suppress bandgap shifts in both p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures, with bandgap shift differences as large as 100 meV observed from samples capped with SiO₂ and with SiO₂:P after rapid thermal processing at temperatures as high as 950 °C for 60 s. Extended cavity ridge lasers exhibited low threshold currents with TE losses of 3.2 cm^-1 measured in the passive waveguide sections at the lasing wavelength using the Fabry-Perot resonance method. This value is among the lowest reported so far using an impurity-free disordering technique.

Original language	English (US)
Pages (from-to)	419-424
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	450
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
General Materials Science

Cite this

@article{f798bf17fc9b44738fb92862d842d3d7,

title = "Impurity free vacancy disordering using phosphorus doped SiO2 and pure SiO2 caps",

abstract = "A spatially selective quantum well intermixing process, using phosphorus-doped silica (SiO2:P) containing 5 wt% P to inhibit intermixing and pure SiO2 to enhance intermixing, is presented. The SiO2:P cap has been found to suppress bandgap shifts in both p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures, with bandgap shift differences as large as 100 meV observed from samples capped with SiO2 and with SiO2:P after rapid thermal processing at temperatures as high as 950 °C for 60 s. Extended cavity ridge lasers exhibited low threshold currents with TE losses of 3.2 cm-1 measured in the passive waveguide sections at the lasing wavelength using the Fabry-Perot resonance method. This value is among the lowest reported so far using an impurity-free disordering technique.",

author = "P. Cusumano and Helmy, {A. Saher} and Ooi, {B. S.} and {De La Rue}, {R. M.} and Bryce, {A. C.} and Marsh, {J. H.}",

year = "1997",

language = "English (US)",

volume = "450",

pages = "419--424",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Impurity free vacancy disordering using phosphorus doped SiO2 and pure SiO2 caps

AU - Cusumano, P.

AU - Helmy, A. Saher

AU - Ooi, B. S.

AU - De La Rue, R. M.

AU - Bryce, A. C.

AU - Marsh, J. H.

PY - 1997

Y1 - 1997

N2 - A spatially selective quantum well intermixing process, using phosphorus-doped silica (SiO2:P) containing 5 wt% P to inhibit intermixing and pure SiO2 to enhance intermixing, is presented. The SiO2:P cap has been found to suppress bandgap shifts in both p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures, with bandgap shift differences as large as 100 meV observed from samples capped with SiO2 and with SiO2:P after rapid thermal processing at temperatures as high as 950 °C for 60 s. Extended cavity ridge lasers exhibited low threshold currents with TE losses of 3.2 cm-1 measured in the passive waveguide sections at the lasing wavelength using the Fabry-Perot resonance method. This value is among the lowest reported so far using an impurity-free disordering technique.

AB - A spatially selective quantum well intermixing process, using phosphorus-doped silica (SiO2:P) containing 5 wt% P to inhibit intermixing and pure SiO2 to enhance intermixing, is presented. The SiO2:P cap has been found to suppress bandgap shifts in both p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures, with bandgap shift differences as large as 100 meV observed from samples capped with SiO2 and with SiO2:P after rapid thermal processing at temperatures as high as 950 °C for 60 s. Extended cavity ridge lasers exhibited low threshold currents with TE losses of 3.2 cm-1 measured in the passive waveguide sections at the lasing wavelength using the Fabry-Perot resonance method. This value is among the lowest reported so far using an impurity-free disordering technique.

UR - http://www.scopus.com/inward/record.url?scp=0030677511&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030677511

SN - 0272-9172

VL - 450

SP - 419

EP - 424

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Impurity free vacancy disordering using phosphorus doped SiO₂ and pure SiO₂ caps

Abstract

ASJC Scopus subject areas

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