Impurity free vacancy disordering using phosphorus doped SiO2 and pure SiO2 caps

P. Cusumano*, A. Saher Helmy, B. S. Ooi, R. M. De La Rue, A. C. Bryce, J. H. Marsh

*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

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