In-Line Tunnel Field Effect Transistor: Drive Current Improvement

Woojin Park, Amir N. Hanna, Arwa T. Kutbee, Muhammad Mustafa Hussain*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold swing, and the intrinsic time delay, etc. The drive current of the in-line TFET is enhanced nearly 7× compared to the conventional TFET. It also shows a significantly reduced subthreshold swing of 37.2 mV/dec.

Original languageEnglish (US)
Pages (from-to)721-725
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume6
DOIs
StatePublished - Jun 4 2018

Keywords

  • TFET
  • in-line tunneling
  • silicon
  • tunneling distance
  • tunneling probability
  • vertical structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Biotechnology

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