In-Line Tunnel Field Effect Transistor: Drive Current Improvement

Woojin Park; Amir N. Hanna; Arwa T. Kutbee; Muhammad Mustafa Hussain

doi:10.1109/JEDS.2018.2844023

In-Line Tunnel Field Effect Transistor: Drive Current Improvement

Woojin Park, Amir N. Hanna, Arwa T. Kutbee, Muhammad Mustafa Hussain^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold swing, and the intrinsic time delay, etc. The drive current of the in-line TFET is enhanced nearly 7× compared to the conventional TFET. It also shows a significantly reduced subthreshold swing of 37.2 mV/dec.

Original language	English (US)
Pages (from-to)	721-725
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	6
DOIs	https://doi.org/10.1109/JEDS.2018.2844023
State	Published - Jun 4 2018

Keywords

TFET
in-line tunneling
silicon
tunneling distance
tunneling probability
vertical structure

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Biotechnology

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10.1109/JEDS.2018.2844023

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title = "In-Line Tunnel Field Effect Transistor: Drive Current Improvement",

abstract = "A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold swing, and the intrinsic time delay, etc. The drive current of the in-line TFET is enhanced nearly 7× compared to the conventional TFET. It also shows a significantly reduced subthreshold swing of 37.2 mV/dec.",

keywords = "TFET, in-line tunneling, silicon, tunneling distance, tunneling probability, vertical structure",

author = "Woojin Park and Hanna, {Amir N.} and Kutbee, {Arwa T.} and Hussain, {Muhammad Mustafa}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2018",

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doi = "10.1109/JEDS.2018.2844023",

language = "English (US)",

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T1 - In-Line Tunnel Field Effect Transistor

T2 - Drive Current Improvement

AU - Park, Woojin

AU - Hanna, Amir N.

AU - Kutbee, Arwa T.

AU - Hussain, Muhammad Mustafa

PY - 2018/6/4

Y1 - 2018/6/4

N2 - A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold swing, and the intrinsic time delay, etc. The drive current of the in-line TFET is enhanced nearly 7× compared to the conventional TFET. It also shows a significantly reduced subthreshold swing of 37.2 mV/dec.

AB - A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold swing, and the intrinsic time delay, etc. The drive current of the in-line TFET is enhanced nearly 7× compared to the conventional TFET. It also shows a significantly reduced subthreshold swing of 37.2 mV/dec.

KW - TFET

KW - in-line tunneling

KW - silicon

KW - tunneling distance

KW - tunneling probability

KW - vertical structure

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JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

In-Line Tunnel Field Effect Transistor: Drive Current Improvement

Abstract

Keywords

ASJC Scopus subject areas

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