TY - JOUR
T1 - In Situ Observation of Low-Power Nano-Synaptic Response in Graphene Oxide Using Conductive Atomic Force Microscopy
AU - Hui, Fei
AU - Liu, Peisong
AU - Hodge, Stephen A.
AU - Carey, Tian
AU - Wen, Chao
AU - Torrisi, Felice
AU - Galhena, D. Thanuja L.
AU - Tomarchio, Flavia
AU - Lin, Yue
AU - Moreno, Enrique
AU - Roldan, Juan B.
AU - Koren, Elad
AU - Ferrari, Andrea C.
AU - Lanza, Mario
N1 - KAUST Repository Item: Exported on 2021-06-07
Acknowledgements: The authors acknowledge funding by the Ministry of Science and Technology of China (grant no. 2018YFE0100800, 2019YFE0124200), the National Natural Science Foundation of China (grant no. 61874075), the Ministry of Finance of China (grant no. SX21400213), the Jiangsu Planned Projects for Postdoctoral Research Funds of China (grant No. 7131712019), the 111 Project from the State Administration of Foreign Experts Affairs of China, the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, the Priority Academic Program Development of Jiangsu Higher Education Institutions, the Isaac Newton Trust, the EU project CareRAMM, EU Graphene Flagship, ERC grants Hetero2D and MINERGRACE, EPSRC grants EP/K01711X/1, EP/K017144/1, EP/N010345/1, EP/M507799/1, EP/L016087/1, EP/R511547/1, EP/P02534X/2, EP/T005106/1, and a Technion-Guangdong Fellowship.
PY - 2021/6/3
Y1 - 2021/6/3
N2 - Multiple studies have reported the observation of electro-synaptic response in different metal/insulator/metal devices. However, most of them analyzed large (>1 µm2 ) devices that do not meet the integration density required by industry (1010 devices/mm2 ). Some studies emploied a scanning tunneling microscope (STM) to explore nano-synaptic response in different materials, but in this setup there is a nanogap between the insulator and one of the metallic electrodes (i.e., the STM tip), not present in real devices. Here, it is demonstrated how to use conductive atomic force microscopy to explore the presence and quality of nano-synaptic response in confined areas
AB - Multiple studies have reported the observation of electro-synaptic response in different metal/insulator/metal devices. However, most of them analyzed large (>1 µm2 ) devices that do not meet the integration density required by industry (1010 devices/mm2 ). Some studies emploied a scanning tunneling microscope (STM) to explore nano-synaptic response in different materials, but in this setup there is a nanogap between the insulator and one of the metallic electrodes (i.e., the STM tip), not present in real devices. Here, it is demonstrated how to use conductive atomic force microscopy to explore the presence and quality of nano-synaptic response in confined areas
UR - http://hdl.handle.net/10754/669400
UR - https://onlinelibrary.wiley.com/doi/10.1002/smll.202101100
U2 - 10.1002/smll.202101100
DO - 10.1002/smll.202101100
M3 - Article
C2 - 34081416
SN - 1613-6810
SP - 2101100
JO - Small
JF - Small
ER -