TY - JOUR
T1 - In Situ Plasma-Grown Silicon-Oxide for Polysilicon Passivating Contacts
AU - Alzahrani, Areej A.
AU - Allen, Thomas
AU - de Bastiani, Michele
AU - Van Kerschaver, Emmanuel
AU - Harrison, George T.
AU - Liu, Wenzhu
AU - De Wolf, Stefaan
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): OSR-CRG URF/1/3383
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-CRG URF/1/3383.
PY - 2020/7/29
Y1 - 2020/7/29
N2 - Large-scale manufacturing of polysilicon-based passivating contacts for high-efficiency crystalline silicon (c-Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum-mechanical tunneling. Here, plasma-dissociated CO2 is investigated to grow in situ thin (
AB - Large-scale manufacturing of polysilicon-based passivating contacts for high-efficiency crystalline silicon (c-Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum-mechanical tunneling. Here, plasma-dissociated CO2 is investigated to grow in situ thin (
UR - http://hdl.handle.net/10754/664514
UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/admi.202000589
UR - http://www.scopus.com/inward/record.url?scp=85088571675&partnerID=8YFLogxK
U2 - 10.1002/admi.202000589
DO - 10.1002/admi.202000589
M3 - Article
SN - 2196-7350
SP - 2000589
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
ER -