In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories

Yu Ting Huang; Shih Ying Yu; Cheng Lun Hsin; Chun Wei Huang; Chen Fang Kang; Fu Hsuan Chu; Jui Yuan Chen; Jung Chih Hu; Lien Tai Chen; Jr Hau He; Wen Wei Wu

doi:10.1021/ac303528m

In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories

Yu Ting Huang, Shih Ying Yu, Cheng Lun Hsin, Chun Wei Huang, Chen Fang Kang, Fu Hsuan Chu, Jui Yuan Chen, Jung Chih Hu, Lien Tai Chen, Jr Hau He, Wen Wei Wu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.

Original language	English (US)
Pages (from-to)	3955-3960
Number of pages	6
Journal	ANALYTICAL CHEMISTRY
Volume	85
Issue number	8
DOIs	https://doi.org/10.1021/ac303528m
State	Published - Apr 16 2013
Externally published	Yes

ASJC Scopus subject areas

Analytical Chemistry

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title = "In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories",

abstract = "Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.",

author = "Huang, {Yu Ting} and Yu, {Shih Ying} and Hsin, {Cheng Lun} and Huang, {Chun Wei} and Kang, {Chen Fang} and Chu, {Fu Hsuan} and Chen, {Jui Yuan} and Hu, {Jung Chih} and Chen, {Lien Tai} and He, {Jr Hau} and Wu, {Wen Wei}",

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month = apr,

day = "16",

doi = "10.1021/ac303528m",

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volume = "85",

pages = "3955--3960",

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TY - JOUR

T1 - In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories

AU - Huang, Yu Ting

AU - Yu, Shih Ying

AU - Hsin, Cheng Lun

AU - Huang, Chun Wei

AU - Kang, Chen Fang

AU - Chu, Fu Hsuan

AU - Chen, Jui Yuan

AU - Hu, Jung Chih

AU - Chen, Lien Tai

AU - He, Jr Hau

AU - Wu, Wen Wei

PY - 2013/4/16

Y1 - 2013/4/16

N2 - Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.

AB - Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.

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DO - 10.1021/ac303528m

M3 - Article

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JO - ANALYTICAL CHEMISTRY

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In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories

Abstract

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