TY - GEN
T1 - In-Solution Germanium Selenide Nanosheets as Charge Trapping Layer in Flash Memories
AU - Elatab, Nazek
AU - Alqahtani, Bashayr
N1 - KAUST Repository Item: Exported on 2023-07-25
PY - 2023/6/11
Y1 - 2023/6/11
N2 - Germanium selenide (GeSe) is a highly promising material with several attractive characteristics, particularly in the field of ferroelectric and phase-change memories due to its outstanding electronic behavior. However, the potential of GeSe as a charge-trapping layer in flash memory has received less attention. Herein, the fabrication of a nonvolatile MOS memory device using GeSe nanosheets as a charge-trapping layer was demonstrated and the materials flakes were examined extensively. The electrical performance of the memory device was investigated. Intriguingly, it exhibited an extraordinarily wide memory window of 9 V under ±10 V electrical biasing. Additionally, the devices presented high endurance of 104 programming and erasing cycles, and reliable charge storage of only 56% loss after 10 years.
AB - Germanium selenide (GeSe) is a highly promising material with several attractive characteristics, particularly in the field of ferroelectric and phase-change memories due to its outstanding electronic behavior. However, the potential of GeSe as a charge-trapping layer in flash memory has received less attention. Herein, the fabrication of a nonvolatile MOS memory device using GeSe nanosheets as a charge-trapping layer was demonstrated and the materials flakes were examined extensively. The electrical performance of the memory device was investigated. Intriguingly, it exhibited an extraordinarily wide memory window of 9 V under ±10 V electrical biasing. Additionally, the devices presented high endurance of 104 programming and erasing cycles, and reliable charge storage of only 56% loss after 10 years.
UR - http://hdl.handle.net/10754/693211
UR - https://ieeexplore.ieee.org/document/10183967/
U2 - 10.23919/snw57900.2023.10183967
DO - 10.23919/snw57900.2023.10183967
M3 - Conference contribution
BT - 2023 Silicon Nanoelectronics Workshop (SNW)
PB - IEEE
ER -