In-Solution Germanium Selenide Nanosheets as Charge Trapping Layer in Flash Memories

Nazek Elatab, Bashayr Alqahtani

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Germanium selenide (GeSe) is a highly promising material with several attractive characteristics, particularly in the field of ferroelectric and phase-change memories due to its outstanding electronic behavior. However, the potential of GeSe as a charge-trapping layer in flash memory has received less attention. Herein, the fabrication of a nonvolatile MOS memory device using GeSe nanosheets as a charge-trapping layer was demonstrated and the materials flakes were examined extensively. The electrical performance of the memory device was investigated. Intriguingly, it exhibited an extraordinarily wide memory window of 9 V under ±10 V electrical biasing. Additionally, the devices presented high endurance of 104 programming and erasing cycles, and reliable charge storage of only 56% loss after 10 years.
Original languageEnglish (US)
Title of host publication2023 Silicon Nanoelectronics Workshop (SNW)
StatePublished - Jun 11 2023


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