InAlGaAs/InAlAs MQWs on Si substrate

Bei Shi; Qiang Li; Yating Wan; Kar Wei Ng; Xinbo Zou; Chak Wah Tang; Kei May Lau

doi:10.1109/LPT.2015.2391099

InAlGaAs/InAlAs MQWs on Si substrate

Bei Shi, Qiang Li, Yating Wan, Kar Wei Ng, Xinbo Zou, Chak Wah Tang, Kei May Lau

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We report the growth and characterization of InAlGaAs/InAlAs multiquantum wells (MQWs) emitting at $\sim 1310$-nm grown on silicon by organometallic vapor phase epitaxy. Compared with the same structure grown on a reference planar InP substrate, photoluminescence of the MQWs on Si shows both comparable line widths and internal quantum efficiencies at room temperature. A specially engineered InP buffer with interlayers on a nanopatterned silicon substrate was used. Cross-sectional transmission electron microscopy reveals effective dislocation filtering by the three strained InGaAs interlayers. The high-quality quantum-well structure grown on the InP-on-Si template suggests great potential of integrating III-V photonic devices on the Si platform.

Original language	English (US)
Pages (from-to)	748-751
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	7
DOIs	https://doi.org/10.1109/LPT.2015.2391099
State	Published - Apr 1 2015
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2015.2391099

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abstract = "We report the growth and characterization of InAlGaAs/InAlAs multiquantum wells (MQWs) emitting at $\sim 1310$-nm grown on silicon by organometallic vapor phase epitaxy. Compared with the same structure grown on a reference planar InP substrate, photoluminescence of the MQWs on Si shows both comparable line widths and internal quantum efficiencies at room temperature. A specially engineered InP buffer with interlayers on a nanopatterned silicon substrate was used. Cross-sectional transmission electron microscopy reveals effective dislocation filtering by the three strained InGaAs interlayers. The high-quality quantum-well structure grown on the InP-on-Si template suggests great potential of integrating III-V photonic devices on the Si platform.",

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T1 - InAlGaAs/InAlAs MQWs on Si substrate

AU - Shi, Bei

AU - Li, Qiang

AU - Wan, Yating

AU - Ng, Kar Wei

AU - Zou, Xinbo

AU - Tang, Chak Wah

AU - Lau, Kei May

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2015/4/1

Y1 - 2015/4/1

N2 - We report the growth and characterization of InAlGaAs/InAlAs multiquantum wells (MQWs) emitting at $\sim 1310$-nm grown on silicon by organometallic vapor phase epitaxy. Compared with the same structure grown on a reference planar InP substrate, photoluminescence of the MQWs on Si shows both comparable line widths and internal quantum efficiencies at room temperature. A specially engineered InP buffer with interlayers on a nanopatterned silicon substrate was used. Cross-sectional transmission electron microscopy reveals effective dislocation filtering by the three strained InGaAs interlayers. The high-quality quantum-well structure grown on the InP-on-Si template suggests great potential of integrating III-V photonic devices on the Si platform.

AB - We report the growth and characterization of InAlGaAs/InAlAs multiquantum wells (MQWs) emitting at $\sim 1310$-nm grown on silicon by organometallic vapor phase epitaxy. Compared with the same structure grown on a reference planar InP substrate, photoluminescence of the MQWs on Si shows both comparable line widths and internal quantum efficiencies at room temperature. A specially engineered InP buffer with interlayers on a nanopatterned silicon substrate was used. Cross-sectional transmission electron microscopy reveals effective dislocation filtering by the three strained InGaAs interlayers. The high-quality quantum-well structure grown on the InP-on-Si template suggests great potential of integrating III-V photonic devices on the Si platform.

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DO - 10.1109/LPT.2015.2391099

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EP - 751

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 7

ER -

InAlGaAs/InAlAs MQWs on Si substrate

Abstract

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