InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths

Kei May Lau; Bei Shi; Yating Wan; Alan Y. Liu; Qiang Li; Si Zhu; Arthur C. Gossard; John E. Bowers; Evelyn L. Hu

doi:10.1117/12.2256481

InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths

Kei May Lau, Bei Shi, Yating Wan, Alan Y. Liu, Qiang Li, Si Zhu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Continuous-wave optically-pumped micro-disk lasers epitaxially grown on silicon with single mode lasing at communication wavelengths from liquid helium to room temperature is reported. Growth of the InAs quantum dots (QDs) gain medium was carried out on high crystalline quality GaAs/InP-on-silicon templates. Special defect filtering techniques have been employed to minimize the impact of the highly lattice-mismatched heteroepitaxial growth on (001) silicon substrates. Compared with quantum wells, the multi-stack InAs QDs are less sensitive to residual defects originated from the hetero-interfaces. Using QDs in a micro-disk resonant cavity with minimized non-radiative surface recombination leads to low-threshold lasing in the micro-disks with a few microns in diameter.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	[email protected]
ISBN (Print)	9781510606876
DOIs	https://doi.org/10.1117/12.2256481
State	Published - Jan 1 2017
Externally published	Yes

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title = "InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths",

abstract = "Continuous-wave optically-pumped micro-disk lasers epitaxially grown on silicon with single mode lasing at communication wavelengths from liquid helium to room temperature is reported. Growth of the InAs quantum dots (QDs) gain medium was carried out on high crystalline quality GaAs/InP-on-silicon templates. Special defect filtering techniques have been employed to minimize the impact of the highly lattice-mismatched heteroepitaxial growth on (001) silicon substrates. Compared with quantum wells, the multi-stack InAs QDs are less sensitive to residual defects originated from the hetero-interfaces. Using QDs in a micro-disk resonant cavity with minimized non-radiative surface recombination leads to low-threshold lasing in the micro-disks with a few microns in diameter.",

author = "Lau, {Kei May} and Bei Shi and Yating Wan and Liu, {Alan Y.} and Qiang Li and Si Zhu and Gossard, {Arthur C.} and Bowers, {John E.} and Hu, {Evelyn L.}",

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AU - Lau, Kei May

AU - Shi, Bei

AU - Wan, Yating

AU - Liu, Alan Y.

AU - Li, Qiang

AU - Zhu, Si

AU - Gossard, Arthur C.

AU - Bowers, John E.

AU - Hu, Evelyn L.

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PY - 2017/1/1

Y1 - 2017/1/1

N2 - Continuous-wave optically-pumped micro-disk lasers epitaxially grown on silicon with single mode lasing at communication wavelengths from liquid helium to room temperature is reported. Growth of the InAs quantum dots (QDs) gain medium was carried out on high crystalline quality GaAs/InP-on-silicon templates. Special defect filtering techniques have been employed to minimize the impact of the highly lattice-mismatched heteroepitaxial growth on (001) silicon substrates. Compared with quantum wells, the multi-stack InAs QDs are less sensitive to residual defects originated from the hetero-interfaces. Using QDs in a micro-disk resonant cavity with minimized non-radiative surface recombination leads to low-threshold lasing in the micro-disks with a few microns in diameter.

AB - Continuous-wave optically-pumped micro-disk lasers epitaxially grown on silicon with single mode lasing at communication wavelengths from liquid helium to room temperature is reported. Growth of the InAs quantum dots (QDs) gain medium was carried out on high crystalline quality GaAs/InP-on-silicon templates. Special defect filtering techniques have been employed to minimize the impact of the highly lattice-mismatched heteroepitaxial growth on (001) silicon substrates. Compared with quantum wells, the multi-stack InAs QDs are less sensitive to residual defects originated from the hetero-interfaces. Using QDs in a micro-disk resonant cavity with minimized non-radiative surface recombination leads to low-threshold lasing in the micro-disks with a few microns in diameter.

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SN - 9781510606876

BT - Proceedings of SPIE - The International Society for Optical Engineering

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ER -

InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths

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