InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths

Kei May Lau, Bei Shi, Yating Wan, Alan Y. Liu, Qiang Li, Si Zhu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Continuous-wave optically-pumped micro-disk lasers epitaxially grown on silicon with single mode lasing at communication wavelengths from liquid helium to room temperature is reported. Growth of the InAs quantum dots (QDs) gain medium was carried out on high crystalline quality GaAs/InP-on-silicon templates. Special defect filtering techniques have been employed to minimize the impact of the highly lattice-mismatched heteroepitaxial growth on (001) silicon substrates. Compared with quantum wells, the multi-stack InAs QDs are less sensitive to residual defects originated from the hetero-interfaces. Using QDs in a micro-disk resonant cavity with minimized non-radiative surface recombination leads to low-threshold lasing in the micro-disks with a few microns in diameter.
Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
ISBN (Print)9781510606876
StatePublished - Jan 1 2017
Externally publishedYes


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