InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

Engineering

• Annealing Temperature 33%
• Blueshift 33%
• Capping Layer 33%
• Dielectric Layer 33%
• Dielectrics 100%
• Emission Wavelength 33%
• Excited State 33%
• Gallium Arsenide 100%
• Ground State 66%
• Interdiffusion 33%
• Light Generation 33%
• Optical Quality 33%
• Photonic Integration 33%
• Quantum Dot 100%
• Realization 33%
• Room Temperature 33%
• State Laser 33%

Keyphrases

• Coherent Light 50%
• Dielectric Encapsulation 50%
• Encapsulation Materials 50%
• Light Addressing 50%
• Light Generation 50%
• Low Annealing Temperature 50%
• State Convergence 50%
• Systematic Description 50%
• TiO2-Al2O3 50%
• ZnO-TiO2 50%

Material Science

• Al2O3 25%
• Annealing 25%
• Dielectric Material 100%
• Gallium Arsenide 100%
• Optical Pumping 25%
• Quantum Dot 100%
• Silicon Nitride 25%
• Solid-State Laser 25%
• Titanium Dioxide 25%
• ZnO 25%