InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates

J. E. Bowers; A. Y. Liu; D. Jung; J. Norman; A. C. Gossard; Y. Wan; Q. Li; K. M. Lau; M. L. Lee

InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates

J. E. Bowers, A. Y. Liu, D. Jung, J. Norman, A. C. Gossard, Y. Wan, Q. Li, K. M. Lau, M. L. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate InAs quantum dot (QD) laser diodes epitaxially grown on exact (001) Si substrates by molecular beam epitaxy. Intentional 4-6 ° offcut substrates have been traditionally employed to avoid formations that stem from the interface between III-V and Si. However, offcut substrates are not fully compatible with the standard CMOS processing. In this work, we employed on-axis GaP/Si and V-groove Si substrates to enable high performance QD laser diodes with output power of more than ∼100 mW and continuous wave (CW) threshold current of ∼30 mA at room temperature (RT).

Original language	English (US)
Title of host publication	CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology
Publisher	CS Mantech
State	Published - Jan 1 2017
Externally published	Yes

Cite this

@inproceedings{e11deec794c14685bcc133502a25b023,

title = "InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates",

abstract = "We demonstrate InAs quantum dot (QD) laser diodes epitaxially grown on exact (001) Si substrates by molecular beam epitaxy. Intentional 4-6 ° offcut substrates have been traditionally employed to avoid formations that stem from the interface between III-V and Si. However, offcut substrates are not fully compatible with the standard CMOS processing. In this work, we employed on-axis GaP/Si and V-groove Si substrates to enable high performance QD laser diodes with output power of more than ∼100 mW and continuous wave (CW) threshold current of ∼30 mA at room temperature (RT).",

author = "Bowers, {J. E.} and Liu, {A. Y.} and D. Jung and J. Norman and Gossard, {A. C.} and Y. Wan and Q. Li and Lau, {K. M.} and Lee, {M. L.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2017",

month = jan,

day = "1",

language = "English (US)",

booktitle = "CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology",

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TY - GEN

T1 - InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates

AU - Bowers, J. E.

AU - Liu, A. Y.

AU - Jung, D.

AU - Norman, J.

AU - Gossard, A. C.

AU - Wan, Y.

AU - Li, Q.

AU - Lau, K. M.

AU - Lee, M. L.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We demonstrate InAs quantum dot (QD) laser diodes epitaxially grown on exact (001) Si substrates by molecular beam epitaxy. Intentional 4-6 ° offcut substrates have been traditionally employed to avoid formations that stem from the interface between III-V and Si. However, offcut substrates are not fully compatible with the standard CMOS processing. In this work, we employed on-axis GaP/Si and V-groove Si substrates to enable high performance QD laser diodes with output power of more than ∼100 mW and continuous wave (CW) threshold current of ∼30 mA at room temperature (RT).

AB - We demonstrate InAs quantum dot (QD) laser diodes epitaxially grown on exact (001) Si substrates by molecular beam epitaxy. Intentional 4-6 ° offcut substrates have been traditionally employed to avoid formations that stem from the interface between III-V and Si. However, offcut substrates are not fully compatible with the standard CMOS processing. In this work, we employed on-axis GaP/Si and V-groove Si substrates to enable high performance QD laser diodes with output power of more than ∼100 mW and continuous wave (CW) threshold current of ∼30 mA at room temperature (RT).

UR - http://www.scopus.com/inward/record.url?scp=85092802636&partnerID=8YFLogxK

M3 - Conference contribution

BT - CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology

PB - CS Mantech

ER -

InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates

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