InAs/InAlGaAs quantum Dot-on-Silicon microdisk lasers Operating at 1.55 μm

Bei Shi; Si Zhu; Qiang Li; Yating Wan; Evelyn L. Hu; Kei May Lau

doi:10.1364/CLEO_SI.2017.SW4C.2

InAs/InAlGaAs quantum Dot-on-Silicon microdisk lasers Operating at 1.55 μm

Bei Shi, Si Zhu, Qiang Li, Yating Wan, Evelyn L. Hu, Kei May Lau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InAs/InAlGaAs quantum dot microdisk lasers were epitaxially grown on Si (001) substrates by MOCVD. CW lasing at 1544 nm was achieved at 4.5 K, with a low threshold of 230 μW and quality factor of 2200.

Original language	English (US)
Title of host publication	Optics InfoBase Conference Papers
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580279
DOIs	https://doi.org/10.1364/CLEO_SI.2017.SW4C.2
State	Published - Jan 1 2017
Externally published	Yes

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10.1364/CLEO_SI.2017.SW4C.2

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@inproceedings{50523305c5d34f128639af625623137a,

title = "InAs/InAlGaAs quantum Dot-on-Silicon microdisk lasers Operating at 1.55 μm",

abstract = "InAs/InAlGaAs quantum dot microdisk lasers were epitaxially grown on Si (001) substrates by MOCVD. CW lasing at 1544 nm was achieved at 4.5 K, with a low threshold of 230 μW and quality factor of 2200.",

author = "Bei Shi and Si Zhu and Qiang Li and Yating Wan and Hu, {Evelyn L.} and Lau, {Kei May}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2017",

month = jan,

day = "1",

doi = "10.1364/CLEO_SI.2017.SW4C.2",

language = "English (US)",

isbn = "9781943580279",

booktitle = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

}

TY - GEN

T1 - InAs/InAlGaAs quantum Dot-on-Silicon microdisk lasers Operating at 1.55 μm

AU - Shi, Bei

AU - Zhu, Si

AU - Li, Qiang

AU - Wan, Yating

AU - Hu, Evelyn L.

AU - Lau, Kei May

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2017/1/1

Y1 - 2017/1/1

N2 - InAs/InAlGaAs quantum dot microdisk lasers were epitaxially grown on Si (001) substrates by MOCVD. CW lasing at 1544 nm was achieved at 4.5 K, with a low threshold of 230 μW and quality factor of 2200.

AB - InAs/InAlGaAs quantum dot microdisk lasers were epitaxially grown on Si (001) substrates by MOCVD. CW lasing at 1544 nm was achieved at 4.5 K, with a low threshold of 230 μW and quality factor of 2200.

UR - https://opg.optica.org/abstract.cfm?URI=CLEO_SI-2017-SW4C.2

UR - http://www.scopus.com/inward/record.url?scp=85020396010&partnerID=8YFLogxK

U2 - 10.1364/CLEO_SI.2017.SW4C.2

DO - 10.1364/CLEO_SI.2017.SW4C.2

M3 - Conference contribution

SN - 9781943580279

BT - Optics InfoBase Conference Papers

PB - Optica Publishing Group (formerly OSA)

ER -

InAs/InAlGaAs quantum Dot-on-Silicon microdisk lasers Operating at 1.55 μm

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