Abstract
This chapter introduces a new class of InAs/InP based ultra-broadband Quantum-dash (Qdash) lasers. It starts by presenting the perspective of its broadband & inhomogeneous nature and the potential in energy efficient optical communication. Firstly, the epitaxial growth of InAs/InP Qdash material system and various works on optimization is discussed. Then, device level characterization of InAs/InP Qdash Fabry-Perot lasers with chronological improvement in their performance is underlined, in particular employment of assisting injection and mode locking techniques. The chapter concludes by summarizing various demonstrations of C- and L-band Qdash laser diode as a cohesive light source in wavelength division multiplexed optical communication system, and unified transmitter source for next generation optical access networks.
Original language | English (US) |
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Title of host publication | Nanoscale Semiconductor Lasers |
Publisher | Elsevier |
Pages | 109-138 |
Number of pages | 30 |
ISBN (Print) | 9780128141625 |
DOIs | |
State | Published - Aug 9 2019 |