Incorporating TCNQ into thiophene-fused heptacene for n-channel field effect transistor

Qun Ye; Jingjing Chang; Kuo-Wei Huang; Gaole Dai; Jie Zhang; Zhikuan Chen; Jishan Wu; Chunyan Chi

doi:10.1021/ol301014d

Incorporating TCNQ into thiophene-fused heptacene for n-channel field effect transistor

Qun Ye, Jingjing Chang, Kuo-Wei Huang, Gaole Dai, Jie Zhang, Zhikuan Chen, Jishan Wu, Chunyan Chi

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Incorporation of electron-deficient tetracyanoquinodimethane (TCNQ) into electron-rich thiophene-fused heptacene was successfully achieved for the purpose of stabilizing longer acenes and generating new n-type organic semiconductors. The heptacene-TCNQ derivative 1 was found to have good stability and an expected electron transporting property. Electron mobility up to 0.01 cm 2 V -1 s -1 has been obtained for this novel material in solution processed organic field effect transistors. © 2012 American Chemical Society.

Original language	English (US)
Pages (from-to)	2786-2789
Number of pages	4
Journal	Organic Letters
Volume	14
Issue number	11
DOIs	https://doi.org/10.1021/ol301014d
State	Published - May 11 2012

ASJC Scopus subject areas

Biochemistry
Organic Chemistry
Physical and Theoretical Chemistry

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10.1021/ol301014d

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title = "Incorporating TCNQ into thiophene-fused heptacene for n-channel field effect transistor",

abstract = "Incorporation of electron-deficient tetracyanoquinodimethane (TCNQ) into electron-rich thiophene-fused heptacene was successfully achieved for the purpose of stabilizing longer acenes and generating new n-type organic semiconductors. The heptacene-TCNQ derivative 1 was found to have good stability and an expected electron transporting property. Electron mobility up to 0.01 cm 2 V -1 s -1 has been obtained for this novel material in solution processed organic field effect transistors. {\textcopyright} 2012 American Chemical Society.",

author = "Qun Ye and Jingjing Chang and Kuo-Wei Huang and Gaole Dai and Jie Zhang and Zhikuan Chen and Jishan Wu and Chunyan Chi",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: C.C. acknowledges financial support from the National University of Singapore under MOE AcRF FRC Grant R-143-000-444-112 and Start-up Grant R-143-000-486-133. K.-W.H. acknowledges the financial support from KAUST.",

year = "2012",

month = may,

day = "11",

doi = "10.1021/ol301014d",

language = "English (US)",

volume = "14",

pages = "2786--2789",

journal = "Organic Letters",

issn = "1523-7060",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Incorporating TCNQ into thiophene-fused heptacene for n-channel field effect transistor

AU - Ye, Qun

AU - Chang, Jingjing

AU - Huang, Kuo-Wei

AU - Dai, Gaole

AU - Zhang, Jie

AU - Chen, Zhikuan

AU - Wu, Jishan

AU - Chi, Chunyan

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: C.C. acknowledges financial support from the National University of Singapore under MOE AcRF FRC Grant R-143-000-444-112 and Start-up Grant R-143-000-486-133. K.-W.H. acknowledges the financial support from KAUST.

PY - 2012/5/11

Y1 - 2012/5/11

N2 - Incorporation of electron-deficient tetracyanoquinodimethane (TCNQ) into electron-rich thiophene-fused heptacene was successfully achieved for the purpose of stabilizing longer acenes and generating new n-type organic semiconductors. The heptacene-TCNQ derivative 1 was found to have good stability and an expected electron transporting property. Electron mobility up to 0.01 cm 2 V -1 s -1 has been obtained for this novel material in solution processed organic field effect transistors. © 2012 American Chemical Society.

AB - Incorporation of electron-deficient tetracyanoquinodimethane (TCNQ) into electron-rich thiophene-fused heptacene was successfully achieved for the purpose of stabilizing longer acenes and generating new n-type organic semiconductors. The heptacene-TCNQ derivative 1 was found to have good stability and an expected electron transporting property. Electron mobility up to 0.01 cm 2 V -1 s -1 has been obtained for this novel material in solution processed organic field effect transistors. © 2012 American Chemical Society.

UR - http://hdl.handle.net/10754/561403

UR - https://pubs.acs.org/doi/10.1021/ol301014d

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U2 - 10.1021/ol301014d

DO - 10.1021/ol301014d

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SN - 1523-7060

VL - 14

SP - 2786

EP - 2789

JO - Organic Letters

JF - Organic Letters

IS - 11

ER -

Incorporating TCNQ into thiophene-fused heptacene for n-channel field effect transistor

Abstract

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