TY - JOUR
T1 - Increasing the Ionization Energy Offset to Increase the Quantum Efficiency in Non-Fullerene Acceptor-Based Organic Solar Cells
T2 - How Far Can We Go?
AU - Gorenflot, Julien
AU - Alsufyani, Wejdan
AU - Alqurashi, Maryam
AU - Paleti, Sri Harish Kumar
AU - Baran, Derya
AU - Laquai, Frédéric
N1 - Funding Information:
The authors acknowledge the support of the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. CCF‐3079.
Publisher Copyright:
© 2023 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH.
PY - 2023/7/6
Y1 - 2023/7/6
N2 - Molecular engineering of organic semiconductors provides a virtually unlimited number of possible structures, yet only a handful of combinations lead to state-of-the-art efficiencies in photovoltaic applications. Thus, design rules that guide material development are needed. One such design principle is that in a bulk heterojunction consisting of an electron donor and lower bandgap acceptor an offset (ΔIE) of at least 0.45 eV is required between both materials ionization energies to overcome energy level bending at the donor–acceptor interface, in turn maximizing the charge separation yield and the cell's internal quantum efficiency. The present work studies energy losses associated with ΔIE and, based on 24 blends, finds that losses are minimal up to a ΔIE of 0.6 eV. Electroluminescence spectroscopy shows that low energy losses are achieved when the charge transfer state energy (ECT) is similar to the acceptor's optical bandgap (EgA). Further ΔIE increase lowers ECT with respect to EgA, thus decreasing VOC. Within that 0.45–0.6 eV ΔIE sweet range, the fill factor FF, hence the power conversion efficiency, increases only marginally as the FF is often already close to maximal for ΔIE = 0.45 eV. The results are extended to 76 binary and ternary blends.
AB - Molecular engineering of organic semiconductors provides a virtually unlimited number of possible structures, yet only a handful of combinations lead to state-of-the-art efficiencies in photovoltaic applications. Thus, design rules that guide material development are needed. One such design principle is that in a bulk heterojunction consisting of an electron donor and lower bandgap acceptor an offset (ΔIE) of at least 0.45 eV is required between both materials ionization energies to overcome energy level bending at the donor–acceptor interface, in turn maximizing the charge separation yield and the cell's internal quantum efficiency. The present work studies energy losses associated with ΔIE and, based on 24 blends, finds that losses are minimal up to a ΔIE of 0.6 eV. Electroluminescence spectroscopy shows that low energy losses are achieved when the charge transfer state energy (ECT) is similar to the acceptor's optical bandgap (EgA). Further ΔIE increase lowers ECT with respect to EgA, thus decreasing VOC. Within that 0.45–0.6 eV ΔIE sweet range, the fill factor FF, hence the power conversion efficiency, increases only marginally as the FF is often already close to maximal for ΔIE = 0.45 eV. The results are extended to 76 binary and ternary blends.
KW - design rules
KW - energy losses
KW - molecule performances predictability
KW - organic photovoltaics
KW - quantum efficiency
UR - http://www.scopus.com/inward/record.url?scp=85151274841&partnerID=8YFLogxK
U2 - 10.1002/admi.202202515
DO - 10.1002/admi.202202515
M3 - Article
AN - SCOPUS:85151274841
SN - 2196-7350
VL - 10
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 19
M1 - 2202515
ER -