Indacenodithiophene-benzothiadiazole organic field-effect transistors with gravure-printed semiconductor and dielectric on plastic

Stuart G. Higgins, Beinn V.O. Muir, Martin Heeney, Alasdair J. Campbell

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We demonstrate the gravure printing of a high-performance indacenodithiophene (IDT) copolymer, indacenodithiophene-benzothiadiazole (C16IDT-BT), onto self-aligned organic field-effect transistor architectures on flexible plastic substrates. We observed that the combination of a gravure-printed dielectric with gravure-printed semiconductor yielded devices with higher mean-effective mobility than devices manufactured using photolithographically patterned dielectric. Peak mobilities of μ = 0.1 cm2 V-1 s-1 were measured, and exceed previous reports for non-printed C16IDT-BT on non-flexible silicon substrates.
Original languageEnglish (US)
Pages (from-to)599-603
Number of pages5
JournalMRS Communications
Volume5
Issue number4
DOIs
StatePublished - Sep 16 2015
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science

Fingerprint

Dive into the research topics of 'Indacenodithiophene-benzothiadiazole organic field-effect transistors with gravure-printed semiconductor and dielectric on plastic'. Together they form a unique fingerprint.

Cite this