Abstract
We demonstrate the gravure printing of a high-performance indacenodithiophene (IDT) copolymer, indacenodithiophene-benzothiadiazole (C16IDT-BT), onto self-aligned organic field-effect transistor architectures on flexible plastic substrates. We observed that the combination of a gravure-printed dielectric with gravure-printed semiconductor yielded devices with higher mean-effective mobility than devices manufactured using photolithographically patterned dielectric. Peak mobilities of μ = 0.1 cm2 V-1 s-1 were measured, and exceed previous reports for non-printed C16IDT-BT on non-flexible silicon substrates.
Original language | English (US) |
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Pages (from-to) | 599-603 |
Number of pages | 5 |
Journal | MRS Communications |
Volume | 5 |
Issue number | 4 |
DOIs | |
State | Published - Sep 16 2015 |
Externally published | Yes |
ASJC Scopus subject areas
- General Materials Science