Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors

Weimin Zhang; Jeremy Smith; Scott E. Watkins; Roman Gysel; Michael McGehee; Alberto Salleo; James Kirkpatrick; Shahid Ashraf; Thomas Anthopoulos; Martin Heeney; Iain McCulloch

doi:10.1021/ja1049324

Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors

Weimin Zhang, Jeremy Smith, Scott E. Watkins, Roman Gysel, Michael McGehee, Alberto Salleo, James Kirkpatrick, Shahid Ashraf, Thomas Anthopoulos, Martin Heeney, Iain McCulloch

Research output: Contribution to journal › Article › peer-review

535 Scopus citations

Abstract

High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm2/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics. © 2010 American Chemical Society.

Original language	English (US)
Pages (from-to)	11437-11439
Number of pages	3
Journal	Journal of the American Chemical Society
Volume	132
Issue number	33
DOIs	https://doi.org/10.1021/ja1049324
State	Published - Aug 25 2010
Externally published	Yes

ASJC Scopus subject areas

Biochemistry
Colloid and Surface Chemistry
General Chemistry
Catalysis

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abstract = "High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm2/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics. {\textcopyright} 2010 American Chemical Society.",

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AU - Zhang, Weimin

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AU - Watkins, Scott E.

AU - Gysel, Roman

AU - McGehee, Michael

AU - Salleo, Alberto

AU - Kirkpatrick, James

AU - Ashraf, Shahid

AU - Anthopoulos, Thomas

AU - Heeney, Martin

AU - McCulloch, Iain

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AB - High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm2/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics. © 2010 American Chemical Society.

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Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors

Abstract

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