Inductively coupled plasma etching of orthorhombic gallium oxide films grown by mist chemical vapor deposition

Yara Banda*, Seong Ho Cho, Yanqing Jia, Si Young Bae, Tien Khee Ng, Boon S. Ooi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We developed an inductively coupled plasma etching process for orthorhombic phase gallium oxide films through tuning of process parameters. We achieved a high etch rate of 130 nm/min while showing a surface roughness reduction of 56%. The optimized etching recipe produced a vertical sidewall profile.

Original languageEnglish (US)
Title of host publication2023 IEEE Photonics Conference, IPC 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350347227
DOIs
StatePublished - 2023
Event2023 IEEE Photonics Conference, IPC 2023 - Orlando, United States
Duration: Nov 12 2023Nov 16 2023

Publication series

Name2023 IEEE Photonics Conference, IPC 2023 - Proceedings

Conference

Conference2023 IEEE Photonics Conference, IPC 2023
Country/TerritoryUnited States
CityOrlando
Period11/12/2311/16/23

Keywords

  • inductively coupled plasma (ICP) etching
  • mist chemical vapor deposition (mist-CVD)
  • orthorhombic gallium oxide

ASJC Scopus subject areas

  • Artificial Intelligence
  • Computer Networks and Communications
  • Safety, Risk, Reliability and Quality
  • Control and Optimization
  • Atomic and Molecular Physics, and Optics

Fingerprint

Dive into the research topics of 'Inductively coupled plasma etching of orthorhombic gallium oxide films grown by mist chemical vapor deposition'. Together they form a unique fingerprint.

Cite this