TY - JOUR
T1 - Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells
AU - Yang, Xinbo
AU - Weber, Klaus
AU - Hameiri, Ziv
AU - De Wolf, Stefaan
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors acknowledge financial support from the Australian Renewable Energy Agency (ARENA) under the Postdoctoral Fellowship. The research reported in this publication was partly supported by funding from King Abdullah University of Science and Technology (KAUST). Ziv Hameiri acknowledges the support of the Australian Research Council (ARC) through the Discovery Early Career Researcher Award (DECRA, Project DE150100268). We also thank Heno Hwang, scientific illustrator at KAUST, for producing Figure 1.
PY - 2017/5/30
Y1 - 2017/5/30
N2 - Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.
AB - Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.
UR - http://hdl.handle.net/10754/624947
UR - http://onlinelibrary.wiley.com/doi/10.1002/pip.2901/full
UR - http://www.scopus.com/inward/record.url?scp=85019673350&partnerID=8YFLogxK
U2 - 10.1002/pip.2901
DO - 10.1002/pip.2901
M3 - Article
SN - 1062-7995
VL - 25
SP - 896
EP - 904
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
IS - 11
ER -