Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

Xinbo Yang*, Klaus Weber, Ziv Hameiri, Stefaan De Wolf

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

142 Scopus citations


Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.
Original languageEnglish (US)
Pages (from-to)896-904
Number of pages9
JournalProgress in Photovoltaics: Research and Applications
Issue number11
StatePublished - May 30 2017


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