Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature

Muhammad Ismail*, Rehmat Ullah, Riaz Hussain, Ijaz Talib, Anwar Manzoor Rana, Muhammad Mustafa Hussain, Khalid Mahmood, Fayyaz Hussain, Ejaz Ahmed, Dinghua Bao

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Fingerprint

Dive into the research topics of 'Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature'. Together they form a unique fingerprint.

Engineering

Material Science

Keyphrases