Influence of Ga+ ion irradiation on magnetoresistance and exchange bias of IrMn/CoFe/Cu/CoFe/NiFe spin valve

Z. B. Guo; D. You; J. J. Qiu; K. B. Li; Y. H. Wu

doi:10.1016/S0038-1098(01)00427-6

Influence of Ga⁺ ion irradiation on magnetoresistance and exchange bias of IrMn/CoFe/Cu/CoFe/NiFe spin valve

Z. B. Guo^*, D. You, J. J. Qiu, K. B. Li, Y. H. Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The spin valve with the structure of IrMn/CoFe/Cu/CoFe/NiFe has been patterned to be a wire with four current-voltage probes. The detailed study of the influence of 30 KeV focused Ga⁺ ion beam irradiation on the magnetoresistance and exchange bias on the patterned sample has been carried out. With an increase in the ion dose, magnetoresistance and exchange bias have been found to be decreasing, and resistance has been found to be increasing. At low doses (≤1.05 × 10¹⁵ ions/cm²), the alternation in resistance is mainly attributed to atomic mixing in the interfacial regions induced by Ga⁺ ion irradiation. However, at high doses (≥3.51 × 10¹⁵ ions/cm²), the bulk defects generated by Ga⁺ ion irradiation have a significant effect on the increase of resistance. At the dose of 3.51 × 10¹⁵ ions/cm² both GMR and AMR behaviors have been observed.

Original language	English (US)
Pages (from-to)	459-462
Number of pages	4
Journal	Solid State Communications
Volume	120
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1098(01)00427-6
State	Published - Nov 19 2001
Externally published	Yes

Keywords

A. Magnetic films and multilayers
B. Iradiation effects

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/S0038-1098(01)00427-6

Cite this

@article{1f63f43d6c0c4ff9805978d2c2de63f0,

title = "Influence of Ga+ ion irradiation on magnetoresistance and exchange bias of IrMn/CoFe/Cu/CoFe/NiFe spin valve",

abstract = "The spin valve with the structure of IrMn/CoFe/Cu/CoFe/NiFe has been patterned to be a wire with four current-voltage probes. The detailed study of the influence of 30 KeV focused Ga+ ion beam irradiation on the magnetoresistance and exchange bias on the patterned sample has been carried out. With an increase in the ion dose, magnetoresistance and exchange bias have been found to be decreasing, and resistance has been found to be increasing. At low doses (≤1.05 × 1015 ions/cm2), the alternation in resistance is mainly attributed to atomic mixing in the interfacial regions induced by Ga+ ion irradiation. However, at high doses (≥3.51 × 1015 ions/cm2), the bulk defects generated by Ga+ ion irradiation have a significant effect on the increase of resistance. At the dose of 3.51 × 1015 ions/cm2 both GMR and AMR behaviors have been observed.",

keywords = "A. Magnetic films and multilayers, B. Iradiation effects",

author = "Guo, {Z. B.} and D. You and Qiu, {J. J.} and Li, {K. B.} and Wu, {Y. H.}",

year = "2001",

month = nov,

day = "19",

doi = "10.1016/S0038-1098(01)00427-6",

language = "English (US)",

volume = "120",

pages = "459--462",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "11",

}

TY - JOUR

T1 - Influence of Ga+ ion irradiation on magnetoresistance and exchange bias of IrMn/CoFe/Cu/CoFe/NiFe spin valve

AU - Guo, Z. B.

AU - You, D.

AU - Qiu, J. J.

AU - Li, K. B.

AU - Wu, Y. H.

PY - 2001/11/19

Y1 - 2001/11/19

N2 - The spin valve with the structure of IrMn/CoFe/Cu/CoFe/NiFe has been patterned to be a wire with four current-voltage probes. The detailed study of the influence of 30 KeV focused Ga+ ion beam irradiation on the magnetoresistance and exchange bias on the patterned sample has been carried out. With an increase in the ion dose, magnetoresistance and exchange bias have been found to be decreasing, and resistance has been found to be increasing. At low doses (≤1.05 × 1015 ions/cm2), the alternation in resistance is mainly attributed to atomic mixing in the interfacial regions induced by Ga+ ion irradiation. However, at high doses (≥3.51 × 1015 ions/cm2), the bulk defects generated by Ga+ ion irradiation have a significant effect on the increase of resistance. At the dose of 3.51 × 1015 ions/cm2 both GMR and AMR behaviors have been observed.

AB - The spin valve with the structure of IrMn/CoFe/Cu/CoFe/NiFe has been patterned to be a wire with four current-voltage probes. The detailed study of the influence of 30 KeV focused Ga+ ion beam irradiation on the magnetoresistance and exchange bias on the patterned sample has been carried out. With an increase in the ion dose, magnetoresistance and exchange bias have been found to be decreasing, and resistance has been found to be increasing. At low doses (≤1.05 × 1015 ions/cm2), the alternation in resistance is mainly attributed to atomic mixing in the interfacial regions induced by Ga+ ion irradiation. However, at high doses (≥3.51 × 1015 ions/cm2), the bulk defects generated by Ga+ ion irradiation have a significant effect on the increase of resistance. At the dose of 3.51 × 1015 ions/cm2 both GMR and AMR behaviors have been observed.

KW - A. Magnetic films and multilayers

KW - B. Iradiation effects

UR - http://www.scopus.com/inward/record.url?scp=0035914544&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(01)00427-6

DO - 10.1016/S0038-1098(01)00427-6

M3 - Article

AN - SCOPUS:0035914544

SN - 0038-1098

VL - 120

SP - 459

EP - 462

JO - Solid State Communications

JF - Solid State Communications

IS - 11

ER -