TY - JOUR
T1 - Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence
AU - Fadil, Ahmed
AU - Iida, Daisuke
AU - Chen, Yuntian
AU - Ou, Yiyu
AU - Kamiyama, Satoshi
AU - Ou, Haiyan
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2016/7/1
Y1 - 2016/7/1
N2 - We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed. Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.
AB - We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed. Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.
UR - https://linkinghub.elsevier.com/retrieve/pii/S0022231315308322
UR - http://www.scopus.com/inward/record.url?scp=84962560030&partnerID=8YFLogxK
U2 - 10.1016/j.jlumin.2016.03.001
DO - 10.1016/j.jlumin.2016.03.001
M3 - Article
SN - 0022-2313
VL - 175
SP - 213
EP - 216
JO - Journal of Luminescence
JF - Journal of Luminescence
ER -