Influence of platinum interlayers on the electrical properties of RuO2/Pb(Zr0.53Ti0.47)O3/RuO 2 capacitor heterostructures

H. N. Al-Shareef; K. R. Bellur; A. I. Kingon; O. Auciello

doi:10.1063/1.113558

Influence of platinum interlayers on the electrical properties of RuO₂/Pb(Zr_0.53Ti_0.47)O₃/RuO ₂ capacitor heterostructures

H. N. Al-Shareef^*, K. R. Bellur, A. I. Kingon, O. Auciello

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

163 Scopus citations

Abstract

Lead zirconate titanate, Pb(Zr_xTi_1-x)O₃ or PZT, thin films grown on RuO₂ electrodes by the sol-gel process have excellent resistance to polarization fatigue, but they generally have two drawbacks. The films have high leakage currents and large property variation. In this letter we show that the use of a thin Pt layer (100 Å) deposited on the bottom RuO₂ electrode to fabricate RuO₂/PZT/Pt/RuO₂/(100)MgO capacitors has two important effects. It reduces capacitor leakage by two to four orders of magnitude and it significantly reduces the large property variation. In addition, these capacitors retain their excellent resistance to polarization fatigue which is characteristic of the RuO₂/PZT/RuO₂ heterostructure.

Original language	English (US)
Pages (from-to)	239
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113558
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Influence of platinum interlayers on the electrical properties of RuO2/Pb(Zr0.53Ti0.47)O3/RuO 2 capacitor heterostructures",

abstract = "Lead zirconate titanate, Pb(ZrxTi1-x)O3 or PZT, thin films grown on RuO2 electrodes by the sol-gel process have excellent resistance to polarization fatigue, but they generally have two drawbacks. The films have high leakage currents and large property variation. In this letter we show that the use of a thin Pt layer (100 {\AA}) deposited on the bottom RuO2 electrode to fabricate RuO2/PZT/Pt/RuO2/(100)MgO capacitors has two important effects. It reduces capacitor leakage by two to four orders of magnitude and it significantly reduces the large property variation. In addition, these capacitors retain their excellent resistance to polarization fatigue which is characteristic of the RuO2/PZT/RuO2 heterostructure.",

author = "Al-Shareef, {H. N.} and Bellur, {K. R.} and Kingon, {A. I.} and O. Auciello",

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journal = "Applied Physics Letters",

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AU - Al-Shareef, H. N.

AU - Bellur, K. R.

AU - Kingon, A. I.

AU - Auciello, O.

PY - 1995

Y1 - 1995

N2 - Lead zirconate titanate, Pb(ZrxTi1-x)O3 or PZT, thin films grown on RuO2 electrodes by the sol-gel process have excellent resistance to polarization fatigue, but they generally have two drawbacks. The films have high leakage currents and large property variation. In this letter we show that the use of a thin Pt layer (100 Å) deposited on the bottom RuO2 electrode to fabricate RuO2/PZT/Pt/RuO2/(100)MgO capacitors has two important effects. It reduces capacitor leakage by two to four orders of magnitude and it significantly reduces the large property variation. In addition, these capacitors retain their excellent resistance to polarization fatigue which is characteristic of the RuO2/PZT/RuO2 heterostructure.

AB - Lead zirconate titanate, Pb(ZrxTi1-x)O3 or PZT, thin films grown on RuO2 electrodes by the sol-gel process have excellent resistance to polarization fatigue, but they generally have two drawbacks. The films have high leakage currents and large property variation. In this letter we show that the use of a thin Pt layer (100 Å) deposited on the bottom RuO2 electrode to fabricate RuO2/PZT/Pt/RuO2/(100)MgO capacitors has two important effects. It reduces capacitor leakage by two to four orders of magnitude and it significantly reduces the large property variation. In addition, these capacitors retain their excellent resistance to polarization fatigue which is characteristic of the RuO2/PZT/RuO2 heterostructure.

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Influence of platinum interlayers on the electrical properties of RuO₂/Pb(Zr_0.53Ti_0.47)O₃/RuO ₂ capacitor heterostructures

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