Abstract
A modeling of reaction pathways in a TMAl/NH3/H2 system including parasitic and polymeric reactions for computational simulations was constructed to study temperature and pressure dependences of growth rates and gas-phase chemistry in metalorganic vapor-phase epitaxial growth of AlN. AlN growth rates calculated were in good agreement with experimental data. Reactive molecules such as MMAlNH and Al-N became the major gas-phase species at the high-temperature range. With increasing pressure, the polymerization of these species was enhanced and AlN growth rate significantly decreased.
Original language | English (US) |
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Pages (from-to) | 133-140 |
Number of pages | 8 |
Journal | Journal of Crystal Growth |
Volume | 304 |
Issue number | 1 |
DOIs | |
State | Published - Jun 1 2007 |
Externally published | Yes |
Keywords
- A1. Computer simulation
- A3. Metalorganic vapor-phase epitaxy
- B1. AlN
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry