TY - JOUR
T1 - Influence of semiconductor/metal interface geometry in an EMR sensor
AU - Sun, Jian
AU - Kosel, Jürgen
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2013/2
Y1 - 2013/2
N2 - The extraordinary magnetoresistance (EMR) is well known to be strongly dependent on geometric parameters. While the influence of the aspect ratios of the metal and semiconductor areas has been thoroughly investigated, the geometry of the semiconductor/metal interface has been neglected so far. However, from a fabrication point of view, this part plays a crucial role. In this paper, the performance of a bar-type hybrid EMR sensor is investigated by means of finite element method and experiments with respect to the hybrid interface geometry. A 3-D model has been developed, which simulates the EMR effect in case of fields in different directions. The semiconductor/metal interface has been investigated in terms of different layer thicknesses and overlaps. The results show that those parameters can cause a change in the output sensitivity of 2%-10%. In order to maintain a high sensitivity and keep the fabrication relatively simple and at low cost, a device with a thin metal shunt having a large overlap on the top of the semiconductor bar would provide the best solution. © 2001-2012 IEEE.
AB - The extraordinary magnetoresistance (EMR) is well known to be strongly dependent on geometric parameters. While the influence of the aspect ratios of the metal and semiconductor areas has been thoroughly investigated, the geometry of the semiconductor/metal interface has been neglected so far. However, from a fabrication point of view, this part plays a crucial role. In this paper, the performance of a bar-type hybrid EMR sensor is investigated by means of finite element method and experiments with respect to the hybrid interface geometry. A 3-D model has been developed, which simulates the EMR effect in case of fields in different directions. The semiconductor/metal interface has been investigated in terms of different layer thicknesses and overlaps. The results show that those parameters can cause a change in the output sensitivity of 2%-10%. In order to maintain a high sensitivity and keep the fabrication relatively simple and at low cost, a device with a thin metal shunt having a large overlap on the top of the semiconductor bar would provide the best solution. © 2001-2012 IEEE.
UR - http://hdl.handle.net/10754/562634
UR - http://ieeexplore.ieee.org/document/6338263/
UR - http://www.scopus.com/inward/record.url?scp=84873207022&partnerID=8YFLogxK
U2 - 10.1109/JSEN.2012.2226150
DO - 10.1109/JSEN.2012.2226150
M3 - Article
SN - 1530-437X
VL - 13
SP - 664
EP - 669
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 2
ER -