Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

Andreas Othonos; G. Itskos; D. D.C. Bradley; M. D. Dawson; I. M. Watson

doi:10.1063/1.3139079

Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

Andreas Othonos, G. Itskos, D. D.C. Bradley, M. D. Dawson, I. M. Watson

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample. © 2009 American Institute of Physics.

Original language	English (US)
Journal	Applied Physics Letters
Volume	94
Issue number	20
DOIs	https://doi.org/10.1063/1.3139079
State	Published - Jun 1 2009
Externally published	Yes

Access to Document

10.1063/1.3139079

Cite this

@article{aafecc617fd74492b835d56642a63332,

title = "Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells",

abstract = "We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample. {\textcopyright} 2009 American Institute of Physics.",

author = "Andreas Othonos and G. Itskos and Bradley, {D. D.C.} and Dawson, {M. D.} and Watson, {I. M.}",

note = "Generated from Scopus record by KAUST IRTS on 2019-11-27",

year = "2009",

month = jun,

day = "1",

doi = "10.1063/1.3139079",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

AU - Othonos, Andreas

AU - Itskos, G.

AU - Bradley, D. D.C.

AU - Dawson, M. D.

AU - Watson, I. M.

N1 - Generated from Scopus record by KAUST IRTS on 2019-11-27

PY - 2009/6/1

Y1 - 2009/6/1

N2 - We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample. © 2009 American Institute of Physics.

AB - We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample. © 2009 American Institute of Physics.

UR - http://aip.scitation.org/doi/10.1063/1.3139079

UR - http://www.scopus.com/inward/record.url?scp=65949106814&partnerID=8YFLogxK

U2 - 10.1063/1.3139079

DO - 10.1063/1.3139079

M3 - Article

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

Abstract

Access to Document

Other files and links

Fingerprint

Cite this