TY - JOUR
T1 - Influence of the vacuum interface on the charge distribution in V2O3 thin films
AU - Schwingenschlögl, Udo
AU - Frésard, R
AU - Eyert, V
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2009/9/22
Y1 - 2009/9/22
N2 - The electronic structure of V2O3 thin films is studied by means of the augmented spherical wave method as based on density functional theory and the local density approximation. We establish that the effects of charge redistribution, induced by the vacuum interface, in such films are restricted to a very narrow surface layer of ≈15 Å thickness. As a consequence, charge redistribution can be ruled out as a source of the extraordinary thickness dependence of the metal–insulator transition observed in V2O3 thin films of ~100–1000 Å thickness.
AB - The electronic structure of V2O3 thin films is studied by means of the augmented spherical wave method as based on density functional theory and the local density approximation. We establish that the effects of charge redistribution, induced by the vacuum interface, in such films are restricted to a very narrow surface layer of ≈15 Å thickness. As a consequence, charge redistribution can be ruled out as a source of the extraordinary thickness dependence of the metal–insulator transition observed in V2O3 thin films of ~100–1000 Å thickness.
UR - http://hdl.handle.net/10754/554387
UR - http://stacks.iop.org/1367-2630/11/i=9/a=093034?key=crossref.365b06e8bc2308309567c30596dcadc9
UR - http://www.scopus.com/inward/record.url?scp=70350134008&partnerID=8YFLogxK
U2 - 10.1088/1367-2630/11/9/093034
DO - 10.1088/1367-2630/11/9/093034
M3 - Article
SN - 1367-2630
VL - 11
SP - 093034
JO - New Journal of Physics
JF - New Journal of Physics
IS - 9
ER -