InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering

H. S. Djie; B. S. Ooi; V. Aimez

doi:10.1016/j.jcrysgro.2005.12.060

InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering

H. S. Djie, B. S. Ooi^*, V. Aimez

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 °C with arsenic (As⁺) and phosphorus (P⁺) ions, at various doses, where the ions were accelerated at 360 keV with the ion angle tilted by 7°. Compared with impurity-free induced intermixing, the intermixing degree is significantly enhanced by temperature-assisted implantation followed by a rapid thermal annealing below 750 °C. The diffusion transient was observed at a longer annealing duration suggesting the complete intermixing of the implantation-induced damage. A blue shift as large as 126 meV has been observed from the P⁺-implanted sample, whilst only ∼14 meV has been measured from the Si_xN _y-capped sample after annealing at 750 °C. The result indicates that a highly selective and low-temperature spatial intermixing, which has a strong potential for photonic integration, could be developed.

Original language	English (US)
Pages (from-to)	40-43
Number of pages	4
Journal	Journal of Crystal Growth
Volume	288
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.060
State	Published - Feb 2 2006
Externally published	Yes
Event	International Conference on Materials for Advanced Technologies - Duration: Jul 4 2005 → Jul 8 2005

Keywords

A1. Quantum-dot intermixing
A2. Ion implantation
B2. Semiconductor quantum dot

ASJC Scopus subject areas

Condensed Matter Physics
Materials Chemistry
Inorganic Chemistry

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10.1016/j.jcrysgro.2005.12.060

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@article{579c3345833e49959145eca86dcd85cd,

title = "InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering",

abstract = "The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 °C with arsenic (As+) and phosphorus (P+) ions, at various doses, where the ions were accelerated at 360 keV with the ion angle tilted by 7°. Compared with impurity-free induced intermixing, the intermixing degree is significantly enhanced by temperature-assisted implantation followed by a rapid thermal annealing below 750 °C. The diffusion transient was observed at a longer annealing duration suggesting the complete intermixing of the implantation-induced damage. A blue shift as large as 126 meV has been observed from the P+-implanted sample, whilst only ∼14 meV has been measured from the SixN y-capped sample after annealing at 750 °C. The result indicates that a highly selective and low-temperature spatial intermixing, which has a strong potential for photonic integration, could be developed.",

keywords = "A1. Quantum-dot intermixing, A2. Ion implantation, B2. Semiconductor quantum dot",

author = "Djie, {H. S.} and Ooi, {B. S.} and V. Aimez",

year = "2006",

month = feb,

day = "2",

doi = "10.1016/j.jcrysgro.2005.12.060",

language = "English (US)",

volume = "288",

pages = "40--43",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

note = "International Conference on Materials for Advanced Technologies ; Conference date: 04-07-2005 Through 08-07-2005",

}

TY - JOUR

T1 - InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering

AU - Djie, H. S.

AU - Ooi, B. S.

AU - Aimez, V.

PY - 2006/2/2

Y1 - 2006/2/2

N2 - The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 °C with arsenic (As+) and phosphorus (P+) ions, at various doses, where the ions were accelerated at 360 keV with the ion angle tilted by 7°. Compared with impurity-free induced intermixing, the intermixing degree is significantly enhanced by temperature-assisted implantation followed by a rapid thermal annealing below 750 °C. The diffusion transient was observed at a longer annealing duration suggesting the complete intermixing of the implantation-induced damage. A blue shift as large as 126 meV has been observed from the P+-implanted sample, whilst only ∼14 meV has been measured from the SixN y-capped sample after annealing at 750 °C. The result indicates that a highly selective and low-temperature spatial intermixing, which has a strong potential for photonic integration, could be developed.

AB - The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 °C with arsenic (As+) and phosphorus (P+) ions, at various doses, where the ions were accelerated at 360 keV with the ion angle tilted by 7°. Compared with impurity-free induced intermixing, the intermixing degree is significantly enhanced by temperature-assisted implantation followed by a rapid thermal annealing below 750 °C. The diffusion transient was observed at a longer annealing duration suggesting the complete intermixing of the implantation-induced damage. A blue shift as large as 126 meV has been observed from the P+-implanted sample, whilst only ∼14 meV has been measured from the SixN y-capped sample after annealing at 750 °C. The result indicates that a highly selective and low-temperature spatial intermixing, which has a strong potential for photonic integration, could be developed.

KW - A1. Quantum-dot intermixing

KW - A2. Ion implantation

KW - B2. Semiconductor quantum dot

UR - http://www.scopus.com/inward/record.url?scp=31644436319&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.12.060

DO - 10.1016/j.jcrysgro.2005.12.060

M3 - Conference article

AN - SCOPUS:31644436319

SN - 0022-0248

VL - 288

SP - 40

EP - 43

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - International Conference on Materials for Advanced Technologies

Y2 - 4 July 2005 through 8 July 2005

ER -

InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering

Abstract

Keywords

ASJC Scopus subject areas

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