Abstract
We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback oscillation. The fabricated SLDs produce a close-to-Gaussian shaped spectrum centered at 1210 nm with a bandwidth of 135 nm. Spectral ripple as low as 0.3 dB has been measured.
Original language | English (US) |
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Pages (from-to) | 251-257 |
Number of pages | 7 |
Journal | IEEE Sensors Journal |
Volume | 7 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2007 |
Externally published | Yes |
Keywords
- Broadband light source
- optical coherence tomography (OCT)
- quantum dot (QD)
- superluminescent diode
ASJC Scopus subject areas
- Instrumentation
- Electrical and Electronic Engineering