TY - JOUR
T1 - InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall
AU - Kirilenko, Pavel
AU - Iida, Daisuke
AU - Zhuang, Zhe
AU - Ohkawa, Kazuhiro
N1 - KAUST Repository Item: Exported on 2022-09-14
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).
PY - 2022/7/25
Y1 - 2022/7/25
N2 - We investigated the effect of the sidewall passivation by hydrogen plasma on the InGaN green micro-LED performance. Hydrogen passivation deactivates the surface region of p-GaN around the perimeter of the device mesa. Thus, hole injection is suppressed in this region, where etching-caused material degradation results in leakage current, decreasing device efficiency. We have confirmed the hydrogen passivation effect on LED square pixels with sizes of 20 and 100 μm. For smaller LEDs, the reverse leakage current has reduced more than tenfold, and the external quantum efficiency of LEDs was enhanced 1.4-times due to the suppression of the non-radiative recombination.
AB - We investigated the effect of the sidewall passivation by hydrogen plasma on the InGaN green micro-LED performance. Hydrogen passivation deactivates the surface region of p-GaN around the perimeter of the device mesa. Thus, hole injection is suppressed in this region, where etching-caused material degradation results in leakage current, decreasing device efficiency. We have confirmed the hydrogen passivation effect on LED square pixels with sizes of 20 and 100 μm. For smaller LEDs, the reverse leakage current has reduced more than tenfold, and the external quantum efficiency of LEDs was enhanced 1.4-times due to the suppression of the non-radiative recombination.
UR - http://hdl.handle.net/10754/679715
UR - https://iopscience.iop.org/article/10.35848/1882-0786/ac7fdc
U2 - 10.35848/1882-0786/ac7fdc
DO - 10.35848/1882-0786/ac7fdc
M3 - Article
SN - 1882-0778
VL - 15
SP - 084003
JO - Applied Physics Express
JF - Applied Physics Express
IS - 8
ER -