TY - JOUR
T1 - InGaN-based red light-emitting diodes: from traditional to micro-LEDs
AU - Zhuang, Zhe
AU - Iida, Daisuke
AU - Ohkawa, Kazuhiro
N1 - KAUST Repository Item: Exported on 2021-08-05
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: This work is supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).
PY - 2021/8/2
Y1 - 2021/8/2
N2 - InGaN-based light-emitting diodes (LEDs) are efficient light sources in the blue-green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates.
AB - InGaN-based light-emitting diodes (LEDs) are efficient light sources in the blue-green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates.
UR - http://hdl.handle.net/10754/670408
UR - https://iopscience.iop.org/article/10.35848/1347-4065/ac1a00
U2 - 10.35848/1347-4065/ac1a00
DO - 10.35848/1347-4065/ac1a00
M3 - Article
SN - 0021-4922
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
ER -