InGaN photocatalysts on conductive Ga2O3 substrates

Taro Ogita; Yusuke Uetake; Yoshihiro Yamashita; Akito Kuramata; Shigenobu Yamakoshi; Kazuhiro Ohkawa

doi:10.1002/pssa.201431731

InGaN photocatalysts on conductive Ga₂O₃ substrates

Taro Ogita, Yusuke Uetake, Yoshihiro Yamashita, Akito Kuramata, Shigenobu Yamakoshi, Kazuhiro Ohkawa^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We succeeded in hydrogen evolution using InGaN photocatalysts grown on conductive Ga₂O₃ substrates. These photocatalysts exhibited a conversion efficiency of 0.8% from incident light energy to stored H₂ chemical energy. Their quantum efficiency was determined to be more than 1% at 404 nm by incident photon-to-current conversion efficiency (IPCE) measurement. We found that the wavelength response of the InGaN structure can be extended to the visible region. These results indicate that the conductive Ga₂O₃ substrates are suitable for the photocatalysts.

Original language	English (US)
Pages (from-to)	1029-1032
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	212
Issue number	5
DOIs	https://doi.org/10.1002/pssa.201431731
State	Published - May 1 2015
Externally published	Yes

Keywords

GaO
InGaN
hydrogen
photocatalysis
substrates

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.201431731

Cite this

@article{0564dfdc3410490a9b8e59536ef96791,

title = "InGaN photocatalysts on conductive Ga2O3 substrates",

abstract = "We succeeded in hydrogen evolution using InGaN photocatalysts grown on conductive Ga2O3 substrates. These photocatalysts exhibited a conversion efficiency of 0.8% from incident light energy to stored H2 chemical energy. Their quantum efficiency was determined to be more than 1% at 404 nm by incident photon-to-current conversion efficiency (IPCE) measurement. We found that the wavelength response of the InGaN structure can be extended to the visible region. These results indicate that the conductive Ga2O3 substrates are suitable for the photocatalysts.",

keywords = "GaO, InGaN, hydrogen, photocatalysis, substrates",

author = "Taro Ogita and Yusuke Uetake and Yoshihiro Yamashita and Akito Kuramata and Shigenobu Yamakoshi and Kazuhiro Ohkawa",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2015",

month = may,

day = "1",

doi = "10.1002/pssa.201431731",

language = "English (US)",

volume = "212",

pages = "1029--1032",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley",

number = "5",

}

TY - JOUR

T1 - InGaN photocatalysts on conductive Ga2O3 substrates

AU - Ogita, Taro

AU - Uetake, Yusuke

AU - Yamashita, Yoshihiro

AU - Kuramata, Akito

AU - Yamakoshi, Shigenobu

AU - Ohkawa, Kazuhiro

PY - 2015/5/1

Y1 - 2015/5/1

N2 - We succeeded in hydrogen evolution using InGaN photocatalysts grown on conductive Ga2O3 substrates. These photocatalysts exhibited a conversion efficiency of 0.8% from incident light energy to stored H2 chemical energy. Their quantum efficiency was determined to be more than 1% at 404 nm by incident photon-to-current conversion efficiency (IPCE) measurement. We found that the wavelength response of the InGaN structure can be extended to the visible region. These results indicate that the conductive Ga2O3 substrates are suitable for the photocatalysts.

AB - We succeeded in hydrogen evolution using InGaN photocatalysts grown on conductive Ga2O3 substrates. These photocatalysts exhibited a conversion efficiency of 0.8% from incident light energy to stored H2 chemical energy. Their quantum efficiency was determined to be more than 1% at 404 nm by incident photon-to-current conversion efficiency (IPCE) measurement. We found that the wavelength response of the InGaN structure can be extended to the visible region. These results indicate that the conductive Ga2O3 substrates are suitable for the photocatalysts.

KW - GaO

KW - InGaN

KW - hydrogen

KW - photocatalysis

KW - substrates

UR - http://www.scopus.com/inward/record.url?scp=85028226596&partnerID=8YFLogxK

U2 - 10.1002/pssa.201431731

DO - 10.1002/pssa.201431731

M3 - Article

AN - SCOPUS:85028226596

SN - 1862-6300

VL - 212

SP - 1029

EP - 1032

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 5

ER -