TY - PAT
T1 - Inkjet Printing With In Situ Fast Annealing For Patterned Multilayer Deposition
AU - Boulfrad, Samir
AU - Alarousu, Erkki
AU - Daas, Eman
AU - Jabbour, Ghassan E.
N1 - KAUST Repository Item: Exported on 2019-02-13
PY - 2013/12/5
Y1 - 2013/12/5
N2 - Patterned multilayer films, such as those used in electronic devices, solar cells, solid oxide fuel cells (SOFCs), and solid oxide electrolysis cells (SOECs) may be deposited and annealed in a single tool. The tool includes an inkjet printer head, a heater, and a laser. The inkjet printer head deposits on a substrate either suspended particles of a functional material or solvated precursors of a functional material. The head is mounted on a support that allows the head to scan the substrate by moving along the support in a first direction and moving the support along a second direction. After the head deposits the material the heater evaporates solvent from substrate, and the depositing and heating may be repeated one or more times to form a patterned multilayer material. Then, a laser, microwave, and/or Joule effect heating device may be used to anneal the multilayer material to a desired pattern and crystalline state.
AB - Patterned multilayer films, such as those used in electronic devices, solar cells, solid oxide fuel cells (SOFCs), and solid oxide electrolysis cells (SOECs) may be deposited and annealed in a single tool. The tool includes an inkjet printer head, a heater, and a laser. The inkjet printer head deposits on a substrate either suspended particles of a functional material or solvated precursors of a functional material. The head is mounted on a support that allows the head to scan the substrate by moving along the support in a first direction and moving the support along a second direction. After the head deposits the material the heater evaporates solvent from substrate, and the depositing and heating may be repeated one or more times to form a patterned multilayer material. Then, a laser, microwave, and/or Joule effect heating device may be used to anneal the multilayer material to a desired pattern and crystalline state.
UR - http://hdl.handle.net/10754/595007
UR - http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220130323434%22.PGNR.&OS=DN/20130323434&RS=DN/20130323434
UR - http://assignment.uspto.gov/#/search?adv=publNum:20130323434
UR - http://www.google.com/patents/US20130323434
UR - http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2013323434A1&KC=A1&FT=D
M3 - Patent
M1 - US 20130323434 A1
ER -