Inkjetted crystalline single monolayer oligothiophene OTFTs

Paul C. Chang; Steven E. Molesa; Amanda R. Murphy; Jean M.J. Fréchet; Vivek Subramanian

doi:10.1109/TED.2006.870885

Inkjetted crystalline single monolayer oligothiophene OTFTs

Paul C. Chang^*, Steven E. Molesa, Amanda R. Murphy, Jean M.J. Fréchet, Vivek Subramanian

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Crystalline monolayer films of a novel organic semiconducting material were deposited as the active layer for organic thin-film transistors (OTFTs) via inkjet printing. Devices exhibited field-effect mobilities up to 0.07 cm²/V · s and on/off ratios > 10⁸, surpassing values measured for devices cast with thicker films of the same material. The printed monolayer devices exhibited superior subthreshold characteristics with less hysteresis, and defect and trap densities are improved over thicker film analogs. These results show that solution deposition techniques such as inkjet printing can result in the monolayer crystalline thin films that are requisite for near-ideal electrostatics in OTFTs.

Original language	English (US)
Pages (from-to)	594-600
Number of pages	7
Journal	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume	53
Issue number	4
DOIs	https://doi.org/10.1109/TED.2006.870885
State	Published - Apr 2006
Externally published	Yes

Keywords

Inkjet
Monolayer
Oligothiophene
Organic thin-film transistor (OTFT)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2006.870885

Cite this

@article{e007052da04a43daa698f8a4ad08b628,

title = "Inkjetted crystalline single monolayer oligothiophene OTFTs",

abstract = "Crystalline monolayer films of a novel organic semiconducting material were deposited as the active layer for organic thin-film transistors (OTFTs) via inkjet printing. Devices exhibited field-effect mobilities up to 0.07 cm2/V · s and on/off ratios > 108, surpassing values measured for devices cast with thicker films of the same material. The printed monolayer devices exhibited superior subthreshold characteristics with less hysteresis, and defect and trap densities are improved over thicker film analogs. These results show that solution deposition techniques such as inkjet printing can result in the monolayer crystalline thin films that are requisite for near-ideal electrostatics in OTFTs.",

keywords = "Inkjet, Monolayer, Oligothiophene, Organic thin-film transistor (OTFT)",

author = "Chang, {Paul C.} and Molesa, {Steven E.} and Murphy, {Amanda R.} and Fr{\'e}chet, {Jean M.J.} and Vivek Subramanian",

year = "2006",

month = apr,

doi = "10.1109/TED.2006.870885",

language = "English (US)",

volume = "53",

pages = "594--600",

journal = "IEEE TRANSACTIONS ON ELECTRON DEVICES",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers",

number = "4",

}

TY - JOUR

T1 - Inkjetted crystalline single monolayer oligothiophene OTFTs

AU - Chang, Paul C.

AU - Molesa, Steven E.

AU - Murphy, Amanda R.

AU - Fréchet, Jean M.J.

AU - Subramanian, Vivek

PY - 2006/4

Y1 - 2006/4

N2 - Crystalline monolayer films of a novel organic semiconducting material were deposited as the active layer for organic thin-film transistors (OTFTs) via inkjet printing. Devices exhibited field-effect mobilities up to 0.07 cm2/V · s and on/off ratios > 108, surpassing values measured for devices cast with thicker films of the same material. The printed monolayer devices exhibited superior subthreshold characteristics with less hysteresis, and defect and trap densities are improved over thicker film analogs. These results show that solution deposition techniques such as inkjet printing can result in the monolayer crystalline thin films that are requisite for near-ideal electrostatics in OTFTs.

AB - Crystalline monolayer films of a novel organic semiconducting material were deposited as the active layer for organic thin-film transistors (OTFTs) via inkjet printing. Devices exhibited field-effect mobilities up to 0.07 cm2/V · s and on/off ratios > 108, surpassing values measured for devices cast with thicker films of the same material. The printed monolayer devices exhibited superior subthreshold characteristics with less hysteresis, and defect and trap densities are improved over thicker film analogs. These results show that solution deposition techniques such as inkjet printing can result in the monolayer crystalline thin films that are requisite for near-ideal electrostatics in OTFTs.

KW - Inkjet

KW - Monolayer

KW - Oligothiophene

KW - Organic thin-film transistor (OTFT)

UR - http://www.scopus.com/inward/record.url?scp=33645737678&partnerID=8YFLogxK

U2 - 10.1109/TED.2006.870885

DO - 10.1109/TED.2006.870885

M3 - Article

AN - SCOPUS:33645737678

SN - 0018-9383

VL - 53

SP - 594

EP - 600

JO - IEEE TRANSACTIONS ON ELECTRON DEVICES

JF - IEEE TRANSACTIONS ON ELECTRON DEVICES

IS - 4

ER -

Inkjetted crystalline single monolayer oligothiophene OTFTs

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this