Insulators for 2D nanoelectronics: the gap to bridge

Yury Yu Illarionov; Theresia Knobloch; Markus Jech; Mario Lanza; Deji Akinwande; Mikhail I. Vexler; Thomas Mueller; Max C. Lemme; Gianluca Fiori; Frank Schwierz; Tibor Grasser

doi:10.1038/s41467-020-16640-8

Insulators for 2D nanoelectronics: the gap to bridge

Yury Yu Illarionov, Theresia Knobloch, Markus Jech, Mario Lanza, Deji Akinwande, Mikhail I. Vexler, Thomas Mueller, Max C. Lemme, Gianluca Fiori, Frank Schwierz, Tibor Grasser

Research output: Contribution to journal › Article › peer-review

302 Scopus citations

Abstract

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.

Original language	English (US)
Journal	Nature Communications
Volume	11
Issue number	1
DOIs	https://doi.org/10.1038/s41467-020-16640-8
State	Published - Dec 1 2020
Externally published	Yes

ASJC Scopus subject areas

General Biochemistry, Genetics and Molecular Biology
General Chemistry
General Physics and Astronomy

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10.1038/s41467-020-16640-8

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abstract = "Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.",

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AU - Illarionov, Yury Yu

AU - Knobloch, Theresia

AU - Jech, Markus

AU - Lanza, Mario

AU - Akinwande, Deji

AU - Vexler, Mikhail I.

AU - Mueller, Thomas

AU - Lemme, Max C.

AU - Fiori, Gianluca

AU - Schwierz, Frank

AU - Grasser, Tibor

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AB - Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.

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Insulators for 2D nanoelectronics: the gap to bridge

Abstract

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