TY - JOUR
T1 - Integrated memory devices based on two-dimensional materials
AU - Xue, Fei
AU - Zhang, Chenhui
AU - Ma, Yinchang
AU - Wen, Yan
AU - He, Xin
AU - Xue, Fei
AU - Zhang, Xixiang
N1 - KAUST Repository Item: Exported on 2022-05-16
Acknowledged KAUST grant number(s): ORS-2018-CRG7-3717, ORS-2019-CRG8-4081
Acknowledgements: Supported by the King Abdullah University of Science and Technology(KAUST) Office of Sponsored Research (OSR) under award numbers: ORS-2019-CRG8-4081 and ORS-2018-CRG7-3717 and the ZJU-Hangzhou Global Scientific and Technological Innovation Centre.
PY - 2022/5/12
Y1 - 2022/5/12
N2 - With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on the memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfil these demands, two-dimensional (2D) materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D material-based memory device arrays with different working mechanisms including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. In this review, we survey recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing. We discuss the existing challenges at the array level, and present the scope for future research.
AB - With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on the memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfil these demands, two-dimensional (2D) materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D material-based memory device arrays with different working mechanisms including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. In this review, we survey recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing. We discuss the existing challenges at the array level, and present the scope for future research.
UR - http://hdl.handle.net/10754/677915
UR - https://onlinelibrary.wiley.com/doi/10.1002/adma.202201880
U2 - 10.1002/adma.202201880
DO - 10.1002/adma.202201880
M3 - Article
C2 - 35557021
SN - 0935-9648
SP - 2201880
JO - Advanced Materials
JF - Advanced Materials
ER -