Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

Chao Shen, Changmin Lee, Tien Khee Ng, James S. Speck, Shuji Nakamura, Steven P. Denbaars, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.

Original languageEnglish (US)
Title of host publication2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781509062904
DOIs
StatePublished - Nov 22 2017
Event2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017 - Singapore, Singapore
Duration: Jul 31 2017Aug 4 2017

Publication series

Name2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017
Volume2017-January

Conference

Conference2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017
Country/TerritorySingapore
CitySingapore
Period07/31/1708/4/17

Keywords

  • Diode laser
  • InGaN laser
  • Photonic integration
  • Semipoalr
  • Visible lasers
  • Visible light communication
  • Waveguide photodetector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications

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