TY - JOUR
T1 - Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation
AU - Gao, Xin
AU - Zheng, Liming
AU - Luo, Fang
AU - Qian, Jun
AU - Wang, Jingyue
AU - Yan, Mingzhi
AU - Wang, Wendong
AU - Wu, Qinci
AU - Tang, Junchuan
AU - Cao, Yisen
AU - Tan, Congwei
AU - Tang, Jilin
AU - Zhu, Mengjian
AU - Wang, Yani
AU - Li, Yanglizhi
AU - Sun, Luzhao
AU - Gao, Guanghui
AU - Yin, Jianbo
AU - Lin, Li
AU - Liu, Zhongfan
AU - Qin, Shiqiao
AU - Peng, Hailin
N1 - Publisher Copyright:
© 2022, The Author(s).
PY - 2022/12
Y1 - 2022/12
N2 - The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO2/Si exhibited high carrier mobility reaching up ~10,000 cm2 V−1 s−1, with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm2 V−1 s−1. Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics.
AB - The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO2/Si exhibited high carrier mobility reaching up ~10,000 cm2 V−1 s−1, with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm2 V−1 s−1. Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics.
UR - http://www.scopus.com/inward/record.url?scp=85137923641&partnerID=8YFLogxK
U2 - 10.1038/s41467-022-33135-w
DO - 10.1038/s41467-022-33135-w
M3 - Article
C2 - 36109519
AN - SCOPUS:85137923641
SN - 2041-1723
VL - 13
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 5410
ER -