Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO 2 gate dielectric

Z. B. Zhang; S. C. Song; C. Huffman; J. Barnett; N. Moumen; H. Alshareef; P. Majhi; M. Hussain; M. S. Akbar; J. H. Sim; S. H. Bae; B. Sassman; B. H. Lee

doi:10.1109/.2005.1469208

Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO ₂ gate dielectric

Z. B. Zhang^*, S. C. Song, C. Huffman, J. Barnett, N. Moumen, H. Alshareef, P. Majhi, M. Hussain, M. S. Akbar, J. H. Sim, S. H. Bae, B. Sassman, B. H. Lee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

38 Scopus citations

Abstract

We report the process module development results and device characteristics of dual metal gate CMOS with TaSiN and Ru gate electrodes on HfO ₂ gate dielectric. The wet etch of TaSiN had a minimal impact on HfO ₂ (ΔEOT<1Å). A plasma etch process has been developed to etch Ru/TaN/Poly (PMOS) and TaSiN/Ru/TaN/Poly (NMOS) gate stacks simultaneously. Well behaved dual metal gate CMOS transistors have been demonstrated with L _g down to 85nm.

Original language	English (US)
Title of host publication	2005 Symposium on VLSI Technology, Digest of Technical Papers
Pages	50-51
Number of pages	2
DOIs	https://doi.org/10.1109/.2005.1469208
State	Published - 2005
Externally published	Yes
Event	2005 Symposium on VLSI Technology - Kyoto, Japan Duration: Jun 14 2005 → Jun 14 2005

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2005
ISSN (Print)	0743-1562

Other

Other	2005 Symposium on VLSI Technology
Country/Territory	Japan
City	Kyoto
Period	06/14/05 → 06/14/05

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/.2005.1469208

Cite this

Zhang, Z. B., Song, S. C., Huffman, C., Barnett, J., Moumen, N., Alshareef, H., Majhi, P., Hussain, M., Akbar, M. S., Sim, J. H., Bae, S. H., Sassman, B., & Lee, B. H. (2005). Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO ₂ gate dielectric. In 2005 Symposium on VLSI Technology, Digest of Technical Papers (pp. 50-51). Article 1469208 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2005). https://doi.org/10.1109/.2005.1469208

@inproceedings{2502816e1dfc43c18f1d4b603c1b2a30,

title = "Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO 2 gate dielectric",

abstract = "We report the process module development results and device characteristics of dual metal gate CMOS with TaSiN and Ru gate electrodes on HfO 2 gate dielectric. The wet etch of TaSiN had a minimal impact on HfO 2 (ΔEOT<1{\AA}). A plasma etch process has been developed to etch Ru/TaN/Poly (PMOS) and TaSiN/Ru/TaN/Poly (NMOS) gate stacks simultaneously. Well behaved dual metal gate CMOS transistors have been demonstrated with L g down to 85nm.",

author = "Zhang, {Z. B.} and Song, {S. C.} and C. Huffman and J. Barnett and N. Moumen and H. Alshareef and P. Majhi and M. Hussain and Akbar, {M. S.} and Sim, {J. H.} and Bae, {S. H.} and B. Sassman and Lee, {B. H.}",

year = "2005",

doi = "10.1109/.2005.1469208",

language = "English (US)",

isbn = "4900784001",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "50--51",

booktitle = "2005 Symposium on VLSI Technology, Digest of Technical Papers",

note = "2005 Symposium on VLSI Technology ; Conference date: 14-06-2005 Through 14-06-2005",

}

Zhang, ZB, Song, SC, Huffman, C, Barnett, J, Moumen, N, Alshareef, H, Majhi, P, Hussain, M, Akbar, MS, Sim, JH, Bae, SH, Sassman, B & Lee, BH 2005, Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO ₂ gate dielectric. in 2005 Symposium on VLSI Technology, Digest of Technical Papers., 1469208, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2005, pp. 50-51, 2005 Symposium on VLSI Technology, Kyoto, Japan, 06/14/05. https://doi.org/10.1109/.2005.1469208

Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO ₂ gate dielectric. / Zhang, Z. B.; Song, S. C.; Huffman, C. et al.
2005 Symposium on VLSI Technology, Digest of Technical Papers. 2005. p. 50-51 1469208 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO 2 gate dielectric

AU - Zhang, Z. B.

AU - Song, S. C.

AU - Huffman, C.

AU - Barnett, J.

AU - Moumen, N.

AU - Alshareef, H.

AU - Majhi, P.

AU - Hussain, M.

AU - Akbar, M. S.

AU - Sim, J. H.

AU - Bae, S. H.

AU - Sassman, B.

AU - Lee, B. H.

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AB - We report the process module development results and device characteristics of dual metal gate CMOS with TaSiN and Ru gate electrodes on HfO 2 gate dielectric. The wet etch of TaSiN had a minimal impact on HfO 2 (ΔEOT<1Å). A plasma etch process has been developed to etch Ru/TaN/Poly (PMOS) and TaSiN/Ru/TaN/Poly (NMOS) gate stacks simultaneously. Well behaved dual metal gate CMOS transistors have been demonstrated with L g down to 85nm.

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