Abstract
We report the integration of solution-processed high-purity semiconducting (7,5) single walled carbon nanotubes (SWCNTs) with metal oxides for the fabrication of high-performance CMOS inverters on free-standing plastic foils. Flexible inverters based on spin-coated SWCNTs and sputtered amorphous InGaZnO (IGZO) exhibit gains up to 85 V/V, even while bent to a tensile radius of 1 cm. To our knowledge, this is the highest gain ever reported for flexible and strained hybrid inverters, supplied at VDD≤10 V. We also realize flexible inverters based on fully solution-deposited SWCNTs and InOx semiconductors.
Original language | English (US) |
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Article number | 7047113 |
Pages (from-to) | 26.4.1-26.4.4 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
Volume | 2015-February |
Issue number | February |
DOIs | |
State | Published - Feb 20 2015 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering