Interdiffused InAsInGaAlAs quantum dashes-in-well structures studied by surface photovoltage spectroscopy

Ts Ivanov; V. Donchev; Y. Wang; H. S. Djie; B. S. Ooi

doi:10.1063/1.2743088

Interdiffused InAsInGaAlAs quantum dashes-in-well structures studied by surface photovoltage spectroscopy

Ts Ivanov^*, V. Donchev, Y. Wang, H. S. Djie, B. S. Ooi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report the study of interband optical transitions in the interdiffused InAs quantum dash (QD) in InAlGaAs quantum well (QW) structures using room temperature surface photovoltage (SPV) spectroscopy. SPV signals have been detected from all relevant portions of both the as-grown and interdiffused structures including the QD, QW, and cladding layer. The effect of group-III intermixing on the interband optical transition energies in the interdiffused structures has also been revealed by the SPV spectroscopy, and the results have been confirmed by photoluminescence measurements. The SPV investigation shows that the compositional intermixing occurs not only between the dash and the surrounding well but also between the well and the surrounding barrier. The results demonstrate the potential of the SPV spectroscopy as a nondestructive, contactless method to characterize optical transitions in complex semiconductor nanostructures at room temperature.

Original language	English (US)
Article number	114309
Journal	Journal of Applied Physics
Volume	101
Issue number	11
DOIs	https://doi.org/10.1063/1.2743088
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.2743088

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@article{0f7a6a8c1b23490e80ec739449fc7a2e,

title = "Interdiffused InAsInGaAlAs quantum dashes-in-well structures studied by surface photovoltage spectroscopy",

abstract = "We report the study of interband optical transitions in the interdiffused InAs quantum dash (QD) in InAlGaAs quantum well (QW) structures using room temperature surface photovoltage (SPV) spectroscopy. SPV signals have been detected from all relevant portions of both the as-grown and interdiffused structures including the QD, QW, and cladding layer. The effect of group-III intermixing on the interband optical transition energies in the interdiffused structures has also been revealed by the SPV spectroscopy, and the results have been confirmed by photoluminescence measurements. The SPV investigation shows that the compositional intermixing occurs not only between the dash and the surrounding well but also between the well and the surrounding barrier. The results demonstrate the potential of the SPV spectroscopy as a nondestructive, contactless method to characterize optical transitions in complex semiconductor nanostructures at room temperature.",

author = "Ts Ivanov and V. Donchev and Y. Wang and Djie, {H. S.} and Ooi, {B. S.}",

note = "Funding Information: We acknowledge the financial supports from the Bulgarian National Science Fund (Contract No. D01-463∕12.7.06) and the Alexander von Humboldt Foundation. The work at Lehigh University is supported in part by the U.S. Army Research Office through the Lehigh-Army Co-operation Agreement and the Pennsylvania Infrastructure Technology Alliance (PITA). One of the authors (Y.W.) would like to thank the Sherman Fairchild Foundation for the graduate student fellowship support.",

year = "2007",

doi = "10.1063/1.2743088",

language = "English (US)",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "11",

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TY - JOUR

T1 - Interdiffused InAsInGaAlAs quantum dashes-in-well structures studied by surface photovoltage spectroscopy

AU - Ivanov, Ts

AU - Donchev, V.

AU - Wang, Y.

AU - Djie, H. S.

AU - Ooi, B. S.

N1 - Funding Information: We acknowledge the financial supports from the Bulgarian National Science Fund (Contract No. D01-463∕12.7.06) and the Alexander von Humboldt Foundation. The work at Lehigh University is supported in part by the U.S. Army Research Office through the Lehigh-Army Co-operation Agreement and the Pennsylvania Infrastructure Technology Alliance (PITA). One of the authors (Y.W.) would like to thank the Sherman Fairchild Foundation for the graduate student fellowship support.

PY - 2007

Y1 - 2007

N2 - We report the study of interband optical transitions in the interdiffused InAs quantum dash (QD) in InAlGaAs quantum well (QW) structures using room temperature surface photovoltage (SPV) spectroscopy. SPV signals have been detected from all relevant portions of both the as-grown and interdiffused structures including the QD, QW, and cladding layer. The effect of group-III intermixing on the interband optical transition energies in the interdiffused structures has also been revealed by the SPV spectroscopy, and the results have been confirmed by photoluminescence measurements. The SPV investigation shows that the compositional intermixing occurs not only between the dash and the surrounding well but also between the well and the surrounding barrier. The results demonstrate the potential of the SPV spectroscopy as a nondestructive, contactless method to characterize optical transitions in complex semiconductor nanostructures at room temperature.

AB - We report the study of interband optical transitions in the interdiffused InAs quantum dash (QD) in InAlGaAs quantum well (QW) structures using room temperature surface photovoltage (SPV) spectroscopy. SPV signals have been detected from all relevant portions of both the as-grown and interdiffused structures including the QD, QW, and cladding layer. The effect of group-III intermixing on the interband optical transition energies in the interdiffused structures has also been revealed by the SPV spectroscopy, and the results have been confirmed by photoluminescence measurements. The SPV investigation shows that the compositional intermixing occurs not only between the dash and the surrounding well but also between the well and the surrounding barrier. The results demonstrate the potential of the SPV spectroscopy as a nondestructive, contactless method to characterize optical transitions in complex semiconductor nanostructures at room temperature.

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DO - 10.1063/1.2743088

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VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114309

ER -

Interdiffused InAsInGaAlAs quantum dashes-in-well structures studied by surface photovoltage spectroscopy

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